HMC460LC5 v03.1010 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Typical Applications Features The HMC460LC5 is ideal for: Noise Figure: 2.5 dB @ 10 GHz • Telecom Infrastructure Gain: 14 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +16.5 dBm @ 10 GHz • Military & Space Supply Voltage: +8V @ 75 mA • Test Instrumentation 50 Ohm Matched Input/Output 32 Lead Ceramic 5x5mm SMT Package: 25mm2 Functional Diagram General Description The HMC460LC5 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier in a leadless 5x5 mm ceramic surface mount package which operates from DC to 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and +16.5 dBm of output power at 1 dB gain compression while requiring only 75 mA from a Vdd = 8V supply. Gain flatness is excellent from DC to 20 GHz making the HMC460LC5 ideal for EW, ECM, Radar and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 75 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6.0 11 Gain Flatness 14 11 ± 0.5 Gain Variation Over Temperature Typ. Max. Min. 6.0 - 18.0 0.008 10 Max. Units GHz 13 dB ± 0.15 ± 0.25 dB 0.01 0.01 dB/ °C Noise Figure 3.5 Input Return Loss 17 18 12 Output Return Loss 17 15 15 dB 15 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 8V, Vgg= -0.9V Typ.) 14 5.0 14 Typ. 18.0 - 20.0 17 2.5 13 16 4.0 3.5 12 5 dB dB 18 18 17 dBm 29.5 29 28.5 dBm 75 75 75 mA * Adjust Vgg between -2 to 0V to achieve Idd= 75 mA typical. 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Broadband Gain & Return Loss 7 Gain vs. Temperature 15 16 5 S11 S21 S22 0 -5 GAIN (dB) RESPONSE (dB) 10 -10 -15 12 +25 C +85 C -40 C 8 -20 4 -25 -30 -35 0 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 20 22 24 0 26 Input Return Loss vs. Temperature 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 0 -5 -10 +25 C +85 C -40 C -5 +25 C +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) 4 Output Return Loss vs. Temperature 0 -15 -20 -25 -10 -15 -20 -25 -30 -35 -30 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Low Frequency Gain & Return Loss 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 Noise Figure vs. Temperature 10 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 +25 C +85 C -40 C 8 NOISE FIGURE (dB) RESPONSE (dB) 2 AMPLIFIERS - LOW NOISE - SMT 20 20 S11 S21 S22 6 4 2 0 -5 10 0.0001 0.001 0.01 0.1 FREQUENCY (GHz) 1 10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC460LC5 v03.1010 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz P1dB vs. Temperature Psat vs. Temperature 25 +25 C +85 C -40 C 22 PSAT (dBm) P1dB (dBm) 22 19 16 13 16 +25 C + 85 C -40 C 13 10 10 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 0 32 GAIN (dB), P1dB (dBm) 30 28 26 24 +25 C +85 C -40 C 22 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 4 6 22 5 16 4 14 3 12 2 10 NOISE FIGURE GAIN P1dB 8 10 12 14 16 FREQUENCY (GHz) 18 20 7.5 22 1 0 8 18 2 20 18 20 0 18 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg Output IP3 vs. Temperature IP3 (dBm) 19 NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 25 7.75 8 8.25 8.5 Vdd (V) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 0 -10 +25 C +85 C -40 C -20 -30 -40 -50 -60 -70 0 7-3 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Drain Bias Voltage (Vdd) +9 Vdc Gate Bias Voltage (Vgg) -2 to 0 Vdc Gate Bias Voltage (Igg) 2.5 mA RF Input Power (RFIN)(Vdd = +8 Vdc) +18 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 23 mW/°C above 85 °C) 2W Thermal Resistance (channel to package bottom) 44.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vdd (V) Idd (mA) +7.5 74 +8.0 75 +8.5 76 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 7 AMPLIFIERS - LOW NOISE - SMT Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C- Pin Descriptions 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Pin Number Function Description 1 - 4, 7 - 12, 14, 16 - 20, 23 - 29, 31 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 5 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 21 GND Package bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC460LC5 v03.1010 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Pin Descriptions Pin Number Function Description 13 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 15 Vgg Gate control for amplifier. Please follow”MMIC Amplifier Biasing Procedure” application note 22 RFOUT This pin is DC coupled and matched to 50 Ohms. 30 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 32 Vdd Power supply voltage for the amplifier. External bypass capacitors are required Interface Schematic Application Circuit 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC460LC5 v03.1010 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 117810 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 2 mm Molex Header C4 100 pF Capacitor, 0402 Pkg. C2, C3 1000 pF Capacitor, 0402 Pkg. C1 4.7 µF Capacitor, Tantalum C5 0.1 uF Capacitor, 0603 Pkg. C6 0.01 uF Capacitor, 0603 Pkg. C7 2.2 uF Capacitor, 0603 Pkg. U1 HMC460LC5 PCB [2] 117808 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6