HMC566LP4E v02.0609 Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Typical Applications Features The HMC566LP4E is ideal for: Low Noise Figure: 2.8 dB • Point-to-Point Radios High Gain: 21 dB • Point-to-Multi-Point Radios & VSAT High OIP3: +24 dBm • Test Equipment and Sensors Single Positive Supply: +3V @ 82 mA • Military & Space 50 Ohm Matched & DC Blocked I/Os 24 Lead 4x4mm QFN Package: 16mm² General Description Functional Diagram The HMC566LP4E is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) in a 4x4 mm SMT package which operates from 28 to 36 GHz. The HMC566LP4E provides 21 dB of small signal gain, 2.8 dB of noise figure and output IP3 of 24 dBm. This self-biased LNA is ideal for hybrid and MCM assemblies due to its compact size, single +3V supply operation, and DC blocked RF I/O’s. The RoHS packaged HMC566LP4E eliminates the need for wirebonding and allows the use of high volume surface mount manufacturing techniques. The HMC566LP4E is also available in chip form as the HMC566. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3, 4 = +3V Parameter Min. Frequency Range Gain Max. Min. 18 Typ. Max. Min. 31.5 - 33.5 21 19.5 Typ. Max. 33.5 - 36 22.5 18 GHz 21 dB 0.03 dB/ °C 0.03 Noise Figure 2.8 Input Return Loss 14 18 12 Output Return Loss 8 10 7 dB Output Power for 1 dB Compression (P1dB) 11 12 11 dBm Saturated Output Power (Psat) 13 14 13 dBm Output Third Order Intercept (IP3) 0.03 Units Gain Variation Over Temperature Supply Current (Idd1+Idd2+Idd3+Idd4) 7-1 Typ. 28 - 31.5 3.6 2.8 23.5 50 82 3.6 3.3 24.5 106 50 82 4.3 dB 24.5 106 50 82 dB dBm 106 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz 30 20 28 15 26 10 24 S21 S11 S22 5 0 -5 22 20 18 -10 16 -15 14 -20 12 +25 C +85 C - 40 C 10 22 24 26 28 30 32 34 36 38 40 26 28 FREQUENCY (GHz) 32 34 36 38 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25 C +85 C - 40 C -5 RETURN LOSS (dB) 30 -10 -15 -20 -5 -10 +25 C +85 C - 40 C -15 -25 -30 Amplifiers - Low Noise - SMT 25 -25 -20 26 28 30 32 34 36 38 26 28 FREQUENCY (GHz) 30 32 34 36 38 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 -10 +25 C +85 C -40 C ISOLATION (dB) 8 NOISE FIGURE (dB) 7 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 6 4 2 -20 +25 C +85 C - 40 C -30 -40 -50 -60 0 -70 26 28 30 32 34 FREQUENCY (GHz) 36 38 26 28 30 32 34 36 38 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC566LP4E v02.0609 Psat vs. Temperature 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 10 8 12 10 8 +25 C +85 C - 40 C 6 +25 C +85 C - 40 C 6 4 4 26 28 30 32 34 36 38 26 28 30 FREQUENCY (GHz) 36 38 25 Pout (dBm), GAIN (dB), PAE (%) 28 26 24 22 20 +25 C +85 C - 40 C 16 14 26 28 30 32 34 36 38 20 Pout Gain PAE 15 10 5 0 -20 -18 -16 -14 Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz 10 27 9 24 8 7 Gain P1dB 6 15 5 12 4 9 3 Noise Figure 6 2 3 1 0 0 2.5 3 Vdd (V) NOISE FIGURE (dB) 18 -10 -8 -6 -4 -2 Absolute Maximum Ratings 30 21 -12 INPUT POWER (dBm) FREQUENCY (GHz) GAIN (dB), P1dB (dBm) 34 Power Compression @ 32 GHz 30 18 7-3 32 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dB) Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Drain Bias Voltage (Vdd1, 2, 3, 4) +3.5 V RF Input Power (RFIN)(Vdd = +3 Vdc) +5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 9.6 mW/°C above 85 °C) 0.8 W Thermal Resistance (channel to ground paddle) 104 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 3.5 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz Vdd (V) Idd (mA) +2.5 79 +3.0 82 +3.5 85 Note: Amplifier will operate over full voltage ranges shown above. Pin Descriptions Pin Number Function Description 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 GND This pins and exposed ground paddle must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 8 - 11 N/C No Connection 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 23, 22, 21, 20 Vdd1, 2, 3, 4 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 10 nF and 4.7 µF are required. Interface Schematic Amplifiers - Low Noise - SMT 7 Typical Supply Current vs. Vdd Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC566LP4E v02.0609 Outline Drawing Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material HMC566LP4E RoHS-compliant Low Stress Injection Molded Plastic Package Marking [1] Lead Finish 100% matte Sn [2] H566 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC566LP4E v02.0609 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122782 Item Description J1 - J5 DC Pin J6 - J7 PCB Mount K Connector C1 - C4 100 pF Capacitor, 0402 Pkg. C5 - C8 10 nF Capacitor, 0603 Pkg. C9 - C12 4.7 µF Capacitor, Tantalum U1 HMC566LP4E PCB [2] 122780 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25 FR [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6