HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5(E) wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT Output IP3: +40 dBm • Military & Space 50 Ohm Matched Input/Output • Test Instrumentation 32 Lead 5x5mm Lead SMT Package: 25mm2 • Fiber Optics Functional Diagram General Description The HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC637LP5(E) amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment. Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA* Parameter Min. Frequency Range Gain Typ. Max. DC - 6 12 Units GHz 13 dB Gain Flatness ±0.75 dB Gain Variation Over Temperature 0.025 dB/ °C Input Return Loss 12 dB Output Return Loss 15 dB Output Power for 1 dB Compression (P1dB) 27 29 dBm 29.5 dBm Output Third Order Intercept (IP3) 40 dBm Noise Figure 5 Saturated Output Power (Psat) Supply Current (Idd) 320 400 dB 480 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain & Return Loss Gain vs. Temperature 20 18 16 14 12 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -10 10 8 9 +25C +85C -40C 6 4 -20 0 0 2 4 6 8 0 2 FREQUENCY (GHz) Input Return Loss vs. Temperature 8 0 +25C +85C -40C +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 6 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 0 2 4 6 8 0 2 FREQUENCY (GHz) 4 6 8 6 8 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 12 0 -10 +25C +85C -40C 10 NOISE FIGURE (dB) ISOLATION (dB) 4 FREQUENCY (GHz) +25C +85C -40C -20 -30 -40 Amplifiers - Linear & Power - SMT 2 -30 8 6 4 -50 2 -60 0 2 4 FREQUENCY (GHz) 6 8 0 2 4 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Psat vs. Temperature 32 30 30 28 28 Psat (dBm) 32 +25C +85C -40C 26 +25C +85C -40C 26 24 24 22 22 20 20 0 2 4 6 8 0 FREQUENCY (GHz) IP3 (dBm) 50 45 40 35 +25C +85C -40C 20 0 2 4 6 8 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 55 25 4 8 45 40 35 30 25 Gain P1dB Psat IP3 20 15 10 11.5 12 FREQUENCY (GHz) 12.5 Vdd (V) Gain & Return Loss vs. Frequency, Log Scale Output IP3 vs. Temperature, Log Scale 20 60 55 10 50 0 IP3 (dBm) S21 S11 S22 -10 45 40 35 30 -20 +25C +85C -40C 25 -30 0.01 0.1 1 FREQUENCY (GHz) 9-3 6 Gain, Power & Output IP3 vs. Supply Voltage @ 3 GHz, Fixed Vgg 60 30 2 FREQUENCY (GHz) Output IP3 vs. Temperature RESPONSE (dB) Amplifiers - Linear & Power - SMT 9 P1dB (dBm) P1dB vs. Temperature 10 20 0.01 0.1 1 10 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637LP5 / 637LP5E Absolute Maximum Ratings Drain Bias Voltage (Vdd) +14 Vdc Gate Bias Voltage (Vgg1) -3 to 0 Vdc GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 11.5 373 Gate Bias Voltage (Vgg2) +4 to +7 Vdc 12.0 400 RF Input Power (RFIN)(Vdd = +12 Vdc) +25 dBm 12.5 425 Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 87 mW/°C above 85 °C) 5.7 W Thermal Resistance (channel to ground paddle) 11.5 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9 Amplifiers - Linear & Power - SMT v02.0709 9-4 HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Outline Drawing Amplifiers - Linear & Power - SMT 9 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC637LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC637LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H637 XXXX H637 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Pin Descriptions Function Description N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2 Vgg2 Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. Attach bypass capacitor per application circuit herein. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 Vgg1 Gate Control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 15 ACG4 Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 21 RFOUT & Vdd 29 ACG2 30 ACG1 Ground Paddle GND RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. Ground paddle must be connected to RF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9 Amplifiers - Linear & Power - SMT Pin Number 1, 3, 4, 6 - 12, 14, 17, 18, 19, 20, 22 - 28, 31, 32 9-6 HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Application Circuit Amplifiers - Linear & Power - SMT 9 9-7 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. NOTE 2: Power Up Bias Sequence A) Set Vgg1 to -2V B) Set Vdd to +12V C) Set Vgg2 to +5V D) Adjust Vgg1 to achieve Idd for 400 mA Power Down Sequence A) Remove Vgg2 Bias B) Remove Vdd Bias C) Remove Vgg1 Bias For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Evaluation PCB List of Materials for Evaluation PCB 108347 Item Description J1 - J2 SRI SMA Connector J3 - J4 2mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C9 4.7 µF Capacitor, Tantalum U1 HMC637LP5 / HMC637LP5E PCB [2] 109765 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT 9 9-8