HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC464LP5 / HMC464LP5E is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +30 dBm 3 LINEAR & POWER AMPLIFIERS - SMT 11 • Military EW, ECM & C I Supply Voltage: +8V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 25 mm2 Leadless SMT Package Functional Diagram General Description The HMC464LP5 & HMC464LP5E are GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm surface mount packages which operate between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5(E) ideal for EW, ECM and radar driver amplifiers as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. Electrical Specifi cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 12 14 Gain Flatness ±0.5 Gain Variation Over Temperature 0.025 Typ. Max. Min. 6.0 - 16.0 11.5 13.5 8 ±0.5 0.035 0.03 Typ. Max. 16.0 - 20.0 0.04 GHz 11 dB ±1.0 dB 0.05 0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB 21 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 23.5 26.5 22 25 18 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. 11 - 258 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Gain vs. Temperature 20 20 15 18 10 16 14 S21 S11 S22 0 -5 -10 12 10 6 -20 4 -25 2 -30 +25C +85C -40C 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Output Return Loss vs. Temperature Input Return Loss vs. Temperature 0 0 -5 -10 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 11 8 -15 -15 -20 -10 -15 -20 -25 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 12 10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 11 -10 -20 -30 -40 -50 +25C +85C -40C -60 +25C +85C -40C 9 8 LINEAR & POWER AMPLIFIERS - SMT 5 GAIN (dB) RESPONSE (dB) Gain & Return Loss 7 6 5 4 3 2 1 -70 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 259 HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz 11 - 260 Psat vs. Temperature 30 28 28 26 26 24 24 Psat (dBm) 30 22 20 18 +25C +85C -40C 16 22 20 18 +25C +85C -40C 16 14 14 12 12 10 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 FREQUENCY (GHz) 32 30 28 26 24 +25C +85C -40C 18 16 0 2 4 6 8 10 12 14 16 18 20 22 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 34 20 8 10 12 14 16 18 20 22 Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg1 36 22 6 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 P1dB (dBm) P1dB vs. Temperature 32 30 28 26 24 22 Gain P1dB Psat IP3 20 18 16 14 12 10 7.5 8 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +9 Vdc Gate Bias Voltage (Vgg1) -2 to 0 Vdc Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) 3.35 W Thermal Resistance (channel to ground paddle) 19.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 8.5 Vdd (V) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +7.5 292 +8.0 290 +8.5 288 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC464LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC464LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H464 XXXX [2] H464 XXXX LINEAR & POWER AMPLIFIERS - SMT 11 [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 261 HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Pin Descriptions Pin Number LINEAR & POWER AMPLIFIERS - SMT 11 Function Description 5 RFIN This pin is AC coupled and matched to 50 Ohms. 15 Vgg1 Gate Control for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. 21 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 30 Vgg2 Control voltage for amplifier. +3V should be applied to Vgg2 for nominal operation. Ground Paddle GND Ground paddle must be connected to RF/DC ground. 1 - 4, 6 - 14, 16 - 20, 22 - 29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 11 - 262 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC464LP5 / 464LP5E v03.0308 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Evaluation PCB List of Materials for Evaluation PCB 108344 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 2 mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 4.7 μF Capacitor, Tantalum U1 HMC464LP5 / HMC464LP5E PCB [2] 109762 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 263