HMC-ALH376 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Typical Applications Features This HMC-ALH376 is ideal for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 16 dB @ 40 GHz • Point-to-Multi-Point Radios P1dB Output Power: +6 dBm • Test Equipment & Sensors Supply Voltage: +4V @ 87 mA • Military & Space Die Size: 2.7 x 1.44 x 0.1 mm Functional Diagram General Description The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm2). Electrical Specifi cations*, TA = +25° C, Vdd= +4V Parameter Min. Frequency Range Gain Typ. Max. Min. 35 - 40 15 Typ. Max. 40 - 45 16 10 3 GHz 12 2.2 dB Noise Figure 2 3 Input Return Loss 10 17 Output Return Loss 16 18 dB Output Power for 1 dB Compression 6 6 dBm Supply Current (Idd) (Vdd= +4V) 87 87 mA *Unless otherwise indicated, all measurements are from probed die 1 - 168 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB dB HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz 20 4 15 10 3 2 1 0 0 35 37 39 41 43 45 35 37 FREQUENCY (GHz) 39 41 43 45 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 -20 -25 -10 -15 LOW NOISE AMPLIFIERS - CHIP 5 NOISE FIGURE (dB) GAIN (dB) 25 5 RETURN LOSS (dB) 1 Noise Figure vs. Frequency Linear Gain vs. Frequency -20 -25 -30 -30 35 37 39 41 FREQUENCY (GHz) 43 45 35 37 39 41 43 45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 169 HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz LOW NOISE AMPLIFIERS - CHIP 1 Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power (35 - 40 GHz) -5 dBm RF Input Power (40 - 45 GHz) -1 dBm Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 170 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 171 HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz LOW NOISE AMPLIFIERS - CHIP 1 Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 1 - 172 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. LOW NOISE AMPLIFIERS - CHIP 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 173