HTSEMI UMG5N

UMG5N
dual digital transistors (PNP+ PNP)
SOT-363
FEATURES
Two DTA114Y chips in a package
z
Marking: G5
1
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
Units
VCC
Supply Voltage
50
V
IC(MAX)
Output Current
100
mA
-6 to +40
V
Vi
Input Voltage
PD
Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
Electrical Characteristics (Ta=25℃)
Parameter
Symbol
Test
Input turn-on voltage
Vi(on)
VO=0.3V, IO=1mA
Input cut-off voltage
Vi(off)
VCC=5V, IO=100µA
Output voltage
VO(on)
IO=5mA, Ii=0.25 mA
0.3
V
Vi =5V
0.88
mA
VCC=50V, Vi=0
0.5
µA
Input cut-off current
Output cut-off current
Ii
IO(off)
conditions
Min
Typ
Max
Unit
1.4
V
0.3
V
DC current gain
Gi
VO =5V, IO=5mA
68
Transition frequency
fT
VO =10V, IO=5mA, f =100MHz
Input resistance
R1
7
13
Resistance ratio
R2/R1
3.7
5.7
250
MHz
KΩ
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05