EMH9 digital transistor (NPN+ NPN) SOT-563 FEATURES Two DTC114Ys chips in a package. z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half. z 1 External circuit MARKING：H9 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6~40 V IO 70 IC(MAX) 100 Power dissipation Pd 150(TOTAL) mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. Typ VI(off) VI(on) Max. 0.3 1.4 Unit V Conditions VCC=5V ,IO=100µA VO=0.3V ,IO=1 mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 68 Input resistance R1 7 10 13 Resistance ratio R2/R1 3.7 4.7 5.7 Transition frequency fT VO=5V ,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz 1 JinYu semiconductor www.htsemi.com Date:2011/ 05