ISC 2SD1650

Inchange Semiconductor
Product Specification
2SD1650
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・Built-in damper diode
・High breakdown voltage
・High speed switching
APPLICATIONS
・For color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
1500
VCEO
Collector-emitter voltage
Open base
800
VEBO
Emitter-base voltage
Open collector
6
V
3.5
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1650
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO
Collector-emitter sustaining voltage
IC=0.1A , IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
ICBO
MIN
TYP.
MAX
800
UNIT
V
5.0
8.0
V
IC=2.5A ;IB=0.8A
1.5
V
Collector cut-off current
VCB=800V; IE=0
10
μA
ICES
Collector cut-off current
VCES=1500V; RBE=∞
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
IF=3.5A
3
MHz
2.0
2
V
Inchange Semiconductor
Product Specification
2SD1650
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3