ISC 2SD1396

Inchange Semiconductor
Product Specification
2SD1396
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching
APPLICATIONS
·For horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
2.5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1396
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector- emitter breakdown voltage
IC=100mA; RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
1500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.6A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.5A ; VCE=10V
tf
Fall time
IC=2A;IB1=0.6A; IB2=-1.2A,
VCC=200V; RL=100Ω
0.7
μs
Diode forward voltage
IEC=2.5A
2.0
V
VF
CONDITIONS
2
MIN
TYP.
MAX
3
UNIT
MHz
Inchange Semiconductor
Product Specification
2SD1396
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3