Inchange Semiconductor Product Specification S2055A Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage ,high speed ・Low collector saturation voltage ・Built-in damper diode APPLICATIONS ・Color TV horizontal output applications ・Color TV switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification S2055A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF Transition frequency IC=0.1A ; VCE=10V 2 MHz fT CONDITIONS 2 MIN TYP. MAX 700 UNIT V Inchange Semiconductor Product Specification S2055A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3