isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL742C DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 900 V VCEW Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 7.5 A IB Base Current-Continuous 2.5 A IBM Base Current-peak 4 A PC Collector Power Dissipation TC=25℃ 50 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL742C ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 500mA; L= 125mH, Imeasure= 100mA 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 11 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.2A 0.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 0.4 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.2A 1.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.2 V ICES Collector Cutoff Current VCES= 900V; VEB=0 VCES= 900V; VEB=0,TC= 150℃ 10 200 μA hFE-1 DC Current Gain IC= 10mA; VCE= 2V 15 hFE-2 DC Current Gain IC= 0.8A; VCE= 2V 15 hFE-3 DC Current Gain IC= 2.5A; VCE= 2V 7 hFE-4 DC Current Gain IC= 5A; VCE= 2V 4 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 60 pF VCEW Collector-Emitter Working Voltage VS= 50V; L= 1mH; IC= 2.5A; IB1= -IB2= 0.5A; VBE(off)= -5V 500 V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V; f= 1MHz 4 MHz isc Website：www.iscsemi.cn TYP. MAX UNIT