ISC BUL312FP

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUL312FP
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power supplies.
n
c
.
i
m
e
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
s
c
s
.i
w
w
w
1150
V
500
V
9
V
5
A
IC
Collector Current-Continuous
ICM
Collector Current-peak tp<5ms
10
A
IB
Base Current-Continuous
3
A
IBM
Base Current-peak tp<5ms
4
A
PC
Collector Power Dissipation
TC=25℃
36
W
Ti
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃/W
Rth j-A
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUL312FP
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; L= 25mH
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
0.7
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.1
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
1.1
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.2
V
VCE=1150V; VBE= 0
VCE=1150V; VBE= 0, TC= 125℃
1.0
2.0
mA
VCE= 500V; IB= 0
0.25
mA
1.9
μs
0.16
μs
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
CONDITIONS
MIN
TYP.
V
9
V
B
B
B
n
c
.
i
m
e
w
w
w
s
c
s
.i
B
IC= 10mA; VCE= 5V
IC= 3A; VCE= 2.5V
UNIT
500
B
B
MAX
8
10
Switching Times, Inductive Load
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 2A; VCL= 250V; L= 200μH;
IB1= 0.4A; VBE(off)= -5V; RBB= 0Ω