isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2722AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 25 A IB Base Current- Continuous 10 A IBM Base Current-Peak 14 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2722AX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 825 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1A 1.0 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V isc Website：www.iscsemi.cn 2 22 4.5 10