Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS(on) = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP...M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Maximum Ratings 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 7.5 35 A A IA EAS TC = 25°C TC = 25°C 16 750 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns PD TC = 25°C 75 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Md Mounting Torque Weight G Isolated Tab D S G = Gate S = Source D = Drain Features Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 8A, Note 1 High Power Density Easy to Mount Space Savings V 5.5 V ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 5 μA 50 μA 420 mΩ Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100149(04/09) IXTP16N50PM Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 8A, Note 1 9 16 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf pF 237 pF 18 pF 24 ns 28 ns Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 8A RG = 10Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 S 2480 Crss td(on) ISOLATED TO-220 (IXTP...M) VDSS, ID = 8A Qgd 70 ns 25 ns 43 nC 15 nC 12 nC 1 2 3 1.66 °C/W RthJC Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 16A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 400 ns Notes:1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP16N50PM Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 20 20 VGS = 10V 8V 18 16 16 14 ID - Amperes 14 ID - Amperes VGS = 10V 8V 7V 18 7V 12 10 8 12 10 6V 8 6 6 4 4 6V 2 5V 2 0 0 0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 Fig. 3. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature 16 18 20 18 20 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Drain Current 3.2 2.8 VGS = 10V 2.8 VGS = 10V 2.6 R DS(on) - Normalized 2.4 R DS(on) - Normalized 14 VDS - Volts VDS - Volts 2.4 I D = 16A 2.0 1.6 I D = 8A 1.2 TJ = 125ºC 2.2 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.8 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 2 4 6 8 10 12 14 16 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 20 8 18 7 16 14 ID - Amperes ID - Amperes 6 5 4 3 TJ = 125ºC 25ºC - 40ºC 12 10 8 6 2 4 1 2 0 0 -50 -25 0 25 50 75 TJ - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.4 4.8 5.2 5.6 VGS - Volts 6.0 6.4 6.8 7.2 IXTP16N50PM Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 28 70 TJ = - 40ºC 24 60 50 25ºC IS - Amperes g f s - Siemens 20 16 125ºC 12 40 30 8 20 4 10 0 TJ = 125ºC TJ = 25ºC 0 0 2 4 6 8 10 12 14 16 18 0.3 20 0.4 0.5 0.6 0.7 ID - Amperes 0.8 0.9 1 1.1 1.2 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 VDS = 250V 9 8 Capacitance - PicoFarads I D = 8A I G = 10mA VGS - Volts 7 6 5 4 3 Ciss 1,000 100 Coss 10 Crss 2 1 f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 10.00 100.0 RDS(on) Limit Z(th)JC - ºC / W ID - Amperes 25µs 10.0 100µs 1ms 10ms 0.10 1.0 TJ = 150ºC 1.00 DC TC = 25ºC Single Pulse 0.1 10 100 1000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N50P(5J)4-30-09-C