Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ...M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Maximum Ratings 300 300 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 25 200 A A IA EAS TC = 25°C TC = 25°C 69 1.5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 15 V/ns PD TC = 25°C 90 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from Case for 10 s Plastic Body for 10 s Md Mounting Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 34.5A, Note 1 V ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved D S G = Gate S = Source D = Drain Features Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages High Power Density Easy to Mount Space Savings V 5.0 G 5 μA 100 μA 49 mΩ Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100204(10/09) IXTQ69N30PM Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 34.5A, Note 1 27 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 45 S 4960 pF 760 pF 190 pF 25 ns 25 ns 75 ns 27 ns 156 nC 32 nC 79 nC Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 34.5A RG = 4Ω (External) Qg(on) VGS= 10V, VDS = 0.5 OVERMOLDED (IXTQ...M) OUTLINE VDSS, ID = 34.5A Qgd 1.38 °C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 69 A Repetitive, Pulse Width Limited by TJM 270 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 250 3.0 ns μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTQ69N30PM Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 180 VGS = 10V 8V 60 VGS = 10V 9V 160 140 8V 120 7V ID - Amperes ID - Amperes 50 40 30 6V 100 7V 80 60 20 6V 40 10 5V 20 0 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 34.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.4 70 VGS = 10V 8V 60 VGS = 10V 3.0 R DS(on) - Normalized 7V ID - Amperes 50 6V 40 30 20 2.6 2.2 I D = 69A 1.8 I D = 34.5A 1.4 1.0 5V 10 0.6 0 0.2 0 1 2 3 4 5 6 7 8 -50 9 -25 0 Fig. 5. RDS(on) Normalized to ID = 34.5A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 4.0 28 VGS = 10V 3.5 24 TJ = 125ºC 3.0 20 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.5 2.0 16 12 8 1.5 TJ = 25ºC 4 1.0 0 0.5 0 20 40 60 80 100 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTQ69N30PM Fig. 8. Transconductance Fig. 7. Input Admittance 90 80 80 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC g f s - Siemens 60 ID - Amperes TJ = - 40ºC 70 30 50 125ºC 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 VGS - Volts 180 9 160 8 140 7 120 100 80 60 70 80 90 VDS = 150V I D = 34.5A I G = 10mA 6 5 4 3 TJ = 125ºC 2 40 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1,000.0 RDS(on) Limit Ciss 100.0 ID - Amperes Capacitance - PicoFarads 50 Fig. 10. Gate Charge 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 60 40 ID - Amperes 1,000 Coss 25µs 100µs 10.0 1ms 1.0 TJ = 150ºC 10ms 100ms TC = 25ºC Single Pulse f = 1 MHz Crss 100 DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTQ69N30PM Fig. 13. Maximum Transient Thermal Impedance 10.000 Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_69N30P(7S)10-16-09-A