Preliminary Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE(sat) tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 66 30 156 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 48 @ ≤ VCES A PC TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features z z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications • Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE= 0V V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 1.5 1.5 6.5 V 10 500 μA μA ±100 nA 1.7 V V • Uninterruptible Power Supplies (UPS) • DC Choppers • AC Motor Speed Drives • DC Servo and Robot Drives z PFC Circuits DS100245A(04/11) IXGH30N60B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 24A, VCE = 10V, Note 1 10 VCE = 25V, VGE = 0V, f = 1MHz IC = 24A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 Inductive load, TJ = 125°C IC = 24A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 RthJC RthCS Notes: 17 S 860 50 29 pF pF pF 77 nC IC = 24A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C TO-247 (IXGH) Outline 9 nC 33 nC 21 34 0.44 200 88 0.70 ns ns mJ ns ns mJ 1.30 20 33 0.75 228 223 1.50 ns ns mJ ns ns mJ 0.21 0.66 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2