HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE(sat) tfi typ IXGH 40N60C IXGT 40N60C = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC110 TC = 110°C 40 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C ICM = 80 @ 0.8 VCES A 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md TO-268 (IXGT) G E TO-247 AD (IXGH) C (TAB) G TO-247 AD TO-268 SMD 6 4 g g E C = Collector, TAB = Collector Features 1.13/10 Nm/lb.in. Weight C G = Gate, E = Emitter, z Mounting torque (M3) C (TAB) z z z International standard packages JEDEC TO-247 and surface mountable TO-268 High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15 V © 2003 IXYS All rights reserved V z z z z z TJ = 25°C TJ = 150°C 2.1 5 V 200 1 µA mA ±100 nA 2.5 V z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS98802A(01/03) IXGH 40N60C IXGT 40N60C Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC110; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies 30 40 S ∅P 3300 pF 310 pF Cres 65 pF Qg 116 nC 23 nC 55 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω 30 ns td(off) Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°°C tfi tri Eon td(off) tfi Eoff IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω 100 150 ns 75 150 ns 0.85 1.7 mJ 25 ns 35 ns 0.40 mJ 50 ns 105 ns 1.2 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.50 K/W RthJC RthCK TO-247 AD Outline (IXGH40N60C) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025