Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi typ IXGH 34N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C 34 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 60 -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 AD TO-268 SMD C (TAB) G W Mounting torque (M3) TO-247 AD (IXGH) A 190 Md = 600 V = 70 A < 1.55 V = 150 ns G = Gate, E = Emitter, z z z 6 4 E C = Collector, TAB = Collector Features z 1.13/10 Nm/lb.in. C g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol VGE(th) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 24 A, VGE = 15 V © 2005 IXYS All rights reserved 2.5 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 z z z z V z 50 1 µA mA ±100 nA 1.55 V PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DS99345(02/05) IXGH 34N60B2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 24 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 18 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge td(on) tri Inductive load, TJ = 25°°C td(off) IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω td(on) Eon td(off) tfi pF 115 pF 40 pF 66 nC 9 nC 22 nC 13 ns 15 Eoff tri 1500 IC = 24 A, VGE = 15 V, VCE = 300 V Qgc tfi S ∅P Cies Coes 26 Inductive load, TJ = 125°°C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω Eoff ns 150 300 ns 150 250 ns 0.64 1.2 mJ 13 ns 17 ns 0.22 mJ 300 ns 250 ns 1.2 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.65 K/W (TO-247) 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC