JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FMMBD4448HAQW WBFBP-06C SURFACE MOUNT SWITCHING DIODE ARRAYS (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar Switching Diode FEATURES z Ultra-Small Surface Mount Package z Fast Switching Speed z High Conductance 1 APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FMMBD4448HAQW Marking:KA5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Symbol Limits Unit VRM 100 V Peak Repetitive peak reverse voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking VR Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA RMS Reverse Voltage Non-Repetitive Peak forward surge current @=1.0µs 4.0 IFSM @=1.0s Pd Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range A 2.0 150 mW RθJA 625 ℃/W TJ 150 ℃ TSTG -65 to +150 ℃ Electrical Ratings @TA=25℃ Parameter Symbol Min. 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 0.1 µA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse Recovery Time trr 4 ns VR=6V,IF=5mA Reverse current VF1 0.62 Conditions Unit IR=100μA Forward voltage 80 Max. V Reverse Breakdown Voltage VR Typ. Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.017 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers