HTSEMI 1N4448WS

1N4448WS
FEATURES
Fast Switching Speed
z
Surface Mount Package Ideally Suited for Automatic Insertion
z
z
For General Purpose Switching Applications
z
High Conductance
SOD-323
+
-
MARKING: T5
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
100
V
Peak Repetitive Peak reverse voltage
VRRM
Working Peak
VRWM
75
V
VR(RMS)
53
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
DC Blocking
VR
Voltage
RMS Reverse Voltage
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal
Resistance
Junction
Ambient
Storage temperature
to
4.0
IFSM
A
1.5
Pd
200
mW
RθJA
625
℃/W
TSTG
-65~+150
℃
Electrical Ratings @TA=25℃
Parameter
Symbol
Min.
V (BR)R
75
VF1
0.62
Typ.
Max.
Unit
Conditions
V
IR=10μA
0.72
V
IF=5mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=100mA
VF4
1.25
V
IF=150mA
IR1
2.5
μA
VR=75V
IR2
25
nA
VR=20V
Capacitance between terminals
CT
4
pF
VR=0V,f=1MHz
Reverse Recovery Time
trr
4
ns
Reverse Breakdown Voltage
Forward voltage
Reverse current
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
1N4448WS
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05