JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor (4×4×0.5) unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP z Epitaxial Planar Die Construction 1 APPLICATION IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 4292 4292 MAXIMUM RATINGS* TA=25℃ unless otherwise noted A42 Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA TJ, Tstg Junction and Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW MAXIMUM RATINGS* TA=25℃ unless otherwise noted A92 Symbol Value Units VCBO Collector-Base Voltage Parameter -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA TJ, Tstg Junction and Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW A42 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless Symbol otherwise Test specified) conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE= 10V, IC= 1mA 60 HFE(2) VCE= 10V, IC=10mA 100 HFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V DC current gain A92 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter VCE= 20V, IC= 10mA fT Transition frequency Symbol 50 f=30MHz unless Test otherwise conditions 200 MHz specified) MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA HFE(1) VCE= -10V, IC= -1mA 60 HFE(2) VCE= -10V, IC=-10mA 100 HFE(3) VCE= -10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2mA -0.9 V DC current gain Transition frequency fT VCE=-20V, IC= -10mA f=30MHz 50 200 MHz A42 A92 Symbol A A1 b D E D1 E1 D2 E2 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.350 0.450 3.900 4.100 3.900 4.100 1.120 REF. 1.120 REF. 0.900 REF. 0.900 REF. 1.000 TYP. 0.450 REF. 0.300 REF. 0.300 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.014 0.018 0.154 0.161 0.154 0.161 0.044 REF. 0.044 REF. 0.035 REF. 0.035 REF. 0.040 TYP. 0.018 REF. 0.012 REF. 0.012 REF.