BC847BV SOT-563 Dual Transistor (NPN) SOT-563 1.600 Features 1.200 Epitaxial Die Construction Complementary PNP Type Available 1.600 0.220 (BC857BV) 0.500 Ultra-Small Surface Mount Package 0.565 Marking: K4V MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.15 W RθJA Thermal Resistance. Junction to Ambient Air 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE Transition frequency fT Output capacitance Noise Figure Cob NF 200 450 IC=10mA,IB=0.5mA 100 IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA 700 IC=100mA,IB=5mA 900 VCE=5V,IC=2mA 580 VCE=5V,IC=10mA VCE=5V,IC=10mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Rs=2kΩ, f=1kHz,BW=200Hz 660 mV mV 700 770 100 mV MHz 4.5 pF 10 dB BC847BV SOT-563 Dual Transistor (NPN) Typical Characteristics