JIANGSU FQZX363C5V6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-06C Plastic-Encapsulate Diodes
WBFBP-06C
FQZX363C5V6~QZX363C20
(2×2×0.5)
unit: mm
QUAD SURFACE MOUNT ZENER DIODE ARRAY
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
z
Nominal Zener Voltages: 5.6V, 6.8V, 12V,15V, 20V
z
Ultra-Small Surface Mount Package
1
APPLICATION
Ideal For Transient Suppression,Sim card circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings
@TA=25℃ unless otherwise specified
Characteristic
*1
Forward Voltage
Symbol
Value
Unit
VF
0.9
V
Pd
150
mW
RθJA
Tj,TSTG
625
℃/w
-65 to +150
℃
@IF=10mA
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Temperature
Type
Marking
mumber
code
Maximum
Maximum Zener
Zener Voltage
*1
Of
Reverse
*2
Impedance
Range
Coefficent
*1
Current
Zener voltage
@IZT=5mA
VZ@IZT
ZZT@IZT
ZZK@IZK
IR
VR
mV/℃
Nom(V)
Min(V)
Max(V)
Ω
mA
Ω
mA
uA
V
Min
Max
QZX363C5V6
K5F
5.6
5.32
5.88
40
5
400
1
1
2.0
-2.0
2.5
QZX363C6V8
K6F
6.8
6.47
7.14
15
5
80
1
2
4.0
1.2
4.5
QZX363C12
KFF
12
11.4
12.7
25
5
150
1
0.1
8.0
6.0
10.0
QZX363C15
KJF
15
13.8
15.6
30
5
200
1
0.1
10.5
9.2
13.0
QZX363C20
KMF
20
19.0
21.0
55
5
225
1
0.1
14
14.4
18.0
Notes:1. Short duration test pulse used to minimize self-heating effect.
2. f = 1KHz.
Typical Characteristics
Symbol
A
A1
b
D
E
D1
E1
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.150
0.250
1.900
2.100
1.900
2.100
0.450 REF.
0.450 REF.
0.650 TYP.
0.400 REF.
0.300 REF.
0.500 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.006
0.010
0.075
0.083
0.075
0.083
0.018 REF.
0.018 REF.
0.026 TYP.
0.016 REF.
0.012 REF.
0.020 REF.
APPLICATION CIRCUITS