Transistors SMD Type Complementary Power Transistors MJD45H11 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Lead Formed for Surface Mount Applications in Plastic Sleeves +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Pb?Free Packages are Available +0.28 1.50 -0.1 +0.2 9.70 -0.2 Complementary Pairs Simplifies Designs +0.15 0.50 -0.15 Fast Switching Speeds 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VCEO 80 V VEB 5 V Collector current IC 8 A Collector current (pulse) ICP 16 A Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 PD 20 0.16 W W/ Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25 PD 1.75 0.014 W W/ Collector-emitter voltage Emitter-base voltage Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Thermal Resistance, Junction?to?Case RèJC 6.25 /W Thermal Resistance, Junction-to-Ambient RèJA 71.4 /W TL 260 Lead Temperature for Soldering www.kexin.com.cn 1 Transistors SMD Type MJD45H11 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter sustaining voltage Collector cutoff current Emitter cutoff current Min Typ Max 80 Unit V ICES VCE = Rated VCEO,VEB = 0 10 ìA IEBO VBE = 5V, IC = 0 50 ìA Collector-emitter saturation voltage VCE(sat) IC = 8 A, IB = 0.4 A 1 V Base-emitter saturation voltage VBE(sat) IC = 8 A, IB = 0.8 A 1.5 V DC current gain hFE Collector capacitance Ccb Current-gain-bandwidth product *2 Delay and rise times fT td + tr IC = 2 A, VCE = 1 V 60 IC = 4 A, VCE = 1 V 40 VCB = 10 V,ftest = 1 MHz 230 pF IC = 0.5 A,VCE = 10 V,f = 20 MHz 40 MHz IC = 5 A, IB1 = 0.5 A 135 ns Storage time ts IC = 5 A, IB1 = IB2 = 0.5 A 500 ns Fall time tf IC = 5 A, IB1 = IB2 = 0.5 A 100 ns Marking Marking 2 Testconditons VCEo(sus) IC = 30 mA, IB = 0 J45H11 www.kexin.com.cn