Transistors SMD Type Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) TO-252 Features Lead Formed for Surface Mount Applications in Plastic Sleeves 6.50 +0.2 5.30-0.2 Monolithic Construction With Built?in Base ? Emitter Resistors +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Pb-Free Packages are Available 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO 100 V Collector-base voltage VCB 100 V Emitter-base voltage VEB 5 V Collector current IC 6 A Collector current (pulse) ICP 10 A A Base current IB 2 Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 PD 20 0.16 W W/ Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25 PD 1.75 0.014 W W/ Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Thermal Resistance, Junction-to-Case RèJC 6.25 /W Thermal Resistance, Junction-to-Ambient RèJA 71.4 /W www.kexin.com.cn 1 Transistors SMD Type MJD41C(NPN) MJD42C(PNP) Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter sustaining voltage VCEo(sus) IC = 30 mA, IB = 0 Min Typ Max 100 Unit V Collector cutoff current ICEO VCE = 60 V, IB = 0 50 ìA Collector cutoff current ICES VCE = 100 V,VEB = 0 10 ìA Emitter cutoff current IEBO VBE = 5V, IC = 0 0.5 mA DC current gain * hFE IC = 0.3 A, VCE = 4 V 30 IC = 3 A, VCE = 4 V 15 Collector-emitter saturation voltage * VCE(sat) IC = 6 A, IB = 600 mA Base-emitter saturation voltage * VBE(on) IC = 6 A, VCE = 4 V 2 fT IC = 500 mA,VCE = 10 V,ftest = 1 MHz 3 Small-signal current gain hfe IC = 0.5 A, VCE = 10 V, f = 1 kHz 20 *1 Pulse test: pulse width 300 ìs, duty cycle ftest hFE Classification TYPE MJD41C MJD42C Marking J41C J42C www.kexin.com.cn 2.0%. 75 1.5 Current-gain-bandwidth product *2 *2 fT= hfe 2 Testconditons V V MHz