Transistors IC SMD Type Driver Transistors MMBTA55,MMBTA56 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT-23 package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol MMBTA55 MMBTA56 Unit Collector-emitter voltage Parameter VCEO -60 -80 V Collector-base voltage VCBO -60 -80 V Emitter-base voltage VEBO -4.0 V Collector current IC -500 mA Total Device Dissipation FR-5 Board(* 1) Derate above 25 PD 225 1.8 mW mW/ Thermal Resistance, Junction-to-Ambient RèJA 556 /W PD 300 2.4 mW mW/ RèJA 417 /W Total Device Dissipation Alumina Substrate, (* 2) Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. www.kexin.com.cn 1 Transistors IC SMD Type MMBTA55,MMBTA56 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage* MMBTA55 V(BR)CEO Testconditons IC = -1.0 mA, IB = 0 MMBTA56 Emitter-base breakdown voltage Base cutoff current Collector cutoff current MMBTA55 Max Unit V -80 V IE = -100 ìA, IC = 0 ICES VCE = -60 V, IB = 0 -0.1 ìA VCB = -60 V, IE = 0 -0.1 ìA -0.1 ìA ICBO -4.0 VCB = -80 V, IE = 0 HFE IC = -10 mA, VCE = -1.0 V 100 IC = -100 mA, VCE = -1.0 V 100 V Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -10 mA -0.25 V Base-emitter saturation voltage VBE(on) IC = -100 mA, VCE = -1.0 V -1.2 V Current-gain-bandwidth product fT * Pulse test: pulse width 300 ìs, duty cycle hFE Classification 2 Typ -60 V(BR)EBO MMBTA56 DC current gain Min TYPE MMBTA55 MMBTA56 Marking 2H 2G www.kexin.com.cn 2.0%. IC = -100 mA, VCE = -1.0 V, f = 100 MHz 50 MHz