KEXIN MMBTA55

Transistors
IC
SMD Type
Driver Transistors
MMBTA55,MMBTA56
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
SOT-23 package
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
MMBTA55
MMBTA56
Unit
Collector-emitter voltage
Parameter
VCEO
-60
-80
V
Collector-base voltage
VCBO
-60
-80
V
Emitter-base voltage
VEBO
-4.0
V
Collector current
IC
-500
mA
Total Device Dissipation FR-5 Board(* 1)
Derate above 25
PD
225
1.8
mW
mW/
Thermal Resistance, Junction-to-Ambient
RèJA
556
/W
PD
300
2.4
mW
mW/
RèJA
417
/W
Total Device Dissipation Alumina Substrate, (* 2)
Derate above 25
Thermal Resistance, Junction-to-Ambient
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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1
Transistors
IC
SMD Type
MMBTA55,MMBTA56
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter breakdown voltage* MMBTA55
V(BR)CEO
Testconditons
IC = -1.0 mA, IB = 0
MMBTA56
Emitter-base breakdown voltage
Base cutoff current
Collector cutoff current
MMBTA55
Max
Unit
V
-80
V
IE = -100 ìA, IC = 0
ICES
VCE = -60 V, IB = 0
-0.1
ìA
VCB = -60 V, IE = 0
-0.1
ìA
-0.1
ìA
ICBO
-4.0
VCB = -80 V, IE = 0
HFE
IC = -10 mA, VCE = -1.0 V
100
IC = -100 mA, VCE = -1.0 V
100
V
Collector-emitter saturation voltage
VCE(sat)
IC = -100 mA, IB = -10 mA
-0.25
V
Base-emitter saturation voltage
VBE(on)
IC = -100 mA, VCE = -1.0 V
-1.2
V
Current-gain-bandwidth product
fT
* Pulse test: pulse width
300 ìs, duty cycle
hFE Classification
2
Typ
-60
V(BR)EBO
MMBTA56
DC current gain
Min
TYPE
MMBTA55
MMBTA56
Marking
2H
2G
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2.0%.
IC = -100 mA, VCE = -1.0 V, f = 100
MHz
50
MHz