Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor Chip On Board package. High speed response. Applications AV Instrumemts Touch panels for ATM & FA epuiments Pin Description ① EMITTER ② COLECTOR Optical counter [TA = 25 Absolute Maximum Ratings Symbol Rating Unit Collector-Emitter Voltage Parameter VCEO 30 V Emitter-Collector Voltage VECO 5 V Collector Current IC 20 mA Collector Power Dissipation PC 75 mW Operating Temperature Topr. -5~+50 Storage Temperature Tstg. -20~+80 Tsol 240 1 Soldering Temperature* ] *1.Test Condition : t ≤ 3s ELECTRO- OPTICAL CHARACTERISTICS Description Dark Current Photo Current Symbol Condition Min. Typ. Max. Unit ICEO VCE=10V, EE=0 - - 100 nA 1.2 - 2.4 mA IPCE VCE=5V, EE=0.5㎽/㎠, PK=640㎚ Spectral Sensitivity Viewing Angle Collector-Emitter Saturation Voltage VR=0V p Peek wavelength 2 nm 880 nm 20 1/2 VCE(SAT) 500~1050 IC=100 , EE=0.5mW/cm , PK=640nm -1- 40 deg. 200 mV 2 - - Silicon photo transistor KDT5001A DYNAMIC CHARACTERISTICS Ta=25℃ EE=1.25㎽/㎠ 4 Power Dissipation vs Ambient Power Dissipation PC (㎽) Collector Current IC (㎃) Collector Current vs Collector-Emitter Voltage EE=1.0㎽/㎠ 3 EE=0.75㎽/㎠ 2 EE=0.5㎽/㎠ 1 0 2 4 6 8 10 Collector-Emitter Voltage VCE (V) 100 75 50 25 0 0 20 101 100 80 100 10-1 0 20 40 60 80 100 120 Ambient Temperature Ta (℃) 10 10 10 1010- 10- 10 10 Irradiance EE (㎽/㎠) Spectral Sensitivity Characteristic Sensitivity Diagram Angular Displacement Angle(deg.) Ta=25℃ 0 +4 100 +60 80 +20 Ta=25℃ - 20 -4 0 50 -80 -100 +80 60 0 0 -6 40 0 +100 Relative Intensity (%) 60 Collector Current vs Illuminance Collector Current IC (㎃) Dark Current ICEO (㎁) Dark Current vs Ambient Temperature 102 40 Ambient Temperature Ta 20 0 100 400 500 600 700 800 900 1000 1100 Wavelength λ (㎚) 50 50 Relative Output (%) -2- 100