ST3811 Semiconductor Photo Transistor Features • φ3mm(T-1) all plastic mold type • Visible light cut-off type Features • VCR, Camcorders • Floppy disk drivers • Optical detectors Outline Dimensions unit : mm 3.0±0.2 4.0±0.2 5.0±0.2 2 0.5 0.5±0.1 1.0MIN 25.0MIN 2.54NOM 1 1 2 3.8 KPT-2002-000 PIN Connections 1. Emitter 2.Collector 1 ST3811 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Emitter Voltage VCEO 35 V Emitter-Collector Voltage VECO 6 V Collector Current IC 20 mA Collector Power Dissipation PD 75 mW Operating Temperature Topr -25～85 ℃ Storage Temperature Tstg -30～100 ℃ 1 * Soldering Temperature 260℃ for 5 seconds Tsol *1.Keep the distance more than 2.0mm from PCB to the bottom of Photo TR package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit ICEO VCEO=10V, Ee=0 - 0.05 0.5 uA ICEL VCE=5V, Ee≒1mW/㎠ - 4.5 - mA VCE(sat) IC=0.5mA, Ee≒1mW/㎠ - 0.2 - V Rise Time tr Fall Time tf VCC=10V, IC=1mA R1=100Ω - - us Spectral Sensitivity λ - Peak Sensitivity Wavelength λP - - 880 - nm θ1/2 IF= 20mA - ±20 - deg Current Dark Current *3Light Current Current-Emitter Saturation Voltage Switching Time Half angle 2.5 3.8 700 ~ 1000 nm *1. Tolerance = ±30% KPT-2002-000 2 ST3811 Characteristic Diagrams Fig. 2 ICEL - VCE Light Current ICEL [mA] Light Current ICEL [mA] Fig. 1 ICEL - Ee Irradiance Ee [mW/㎠] Collector-Emitter Voltage VCE [V] Fig.4 ICEO – Ta Power Dissipation PD [mW] Collector Dark Current ICEO [uA] Fig. 3 PD – Ta Ambient Temperature Ta [℃] Fig. 5 Sensitivity Diagram Relative Intensity [%] Fig. 5 Spectrum Sensitivity Ambient Temperature Ta [℃] Wavelength λ [nm] KPT-2002-000 Relative Luminous Intensity Iv [%] 3