SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection High Voltage: BVDSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.) D D Ordering Information G G Type No. Marking Package Code SMK1820D SMK1820 TO-252 S TO-252 S Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 30 V (TC=25℃) 18 A (TC=100℃) 11.3 A Drain current (DC) * ID * IDM 72 A Drain power dissipation PD 70 W Drain current (Pulsed) Avalanche current (Single) ② IAS 18 A Single pulsed avalanche energy ② EAS 453 mJ Avalanche current (Repetitive) ① IAR 18 A Repetitive avalanche energy ① EAR 13.9 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range C * Limited by maximum junction temperature Characteristic Thermal resistance ** Symbol Typ. Max Junction-case Rth(J-C) - 1.79 Junction-ambient Rth(J-A) - 50 Unit ℃/W ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O013-001 1 SMK1820D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250A, VGS=0 200 - - V Gate threshold voltage VGS(th) ID=250A, VDS= VGS 2.0 - 4.0 V VDS=200V, VGS=0V - - 1 A Drain-source cut-off current IDSS VDS=160V, VGS=0V, TC=125℃ - - 100 A Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=9.0A - 0.14 0.17 Forward transfer conductance ④ gfs VDS=10V, ID=9.0A - 10.5 - S - 942 1240 - 227 310 - 55 71 - 15 - - 130 - - 135 - - 105 - - 22 28 - 6.6 - - 7.2 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=25V, f=1MHz tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge VDD=125V, ID=18A RG=25Ω ③④ VDS=160V, VGS=10V ID=18A ③④ Qgd pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Source current IS Test Condition Min Typ Max - - 18 - - 72 Unit Source current(Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=18A - - 1.4 V Reverse recovery time trr - 208 - ns Reverse recovery charge Qrr Is=18A, VGS=0, diS/dt=100A/us - 1.63 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2.1mH, IAS=18A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6O013-001 2 SMK1820D Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T6O013-001 3 SMK1820D Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C C Fig. 9 Fig. 10 Safe Operating Area ID - TC * KSD-T6O013-001 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK1820D Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6O013-001 5 SMK1820D Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6O013-001 6 SMK1820D Outline Dimension ※ Recommended Land Pattern [unit: mm] 2.50 7.00 7.00 1.50 4.60 KSD-T6O013-001 7 SMK1820D The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6O013-001 8