KODENSHI STJ004SF

STJ004SF
Advanced P-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features




PIN Connection
Low Voltage : BVDSS=-30V(Min.)
Low VGS(th) : VGS(th)=-0.7~-1.4V
Small footprint due to small package
Low RDS(on) : RDS(on)=91mΩ(Max.)
D
D
G
G
Ordering Information
Type No.
Marking
Package Code
STJ004SF
J04 □
① ②
SOT-23F
S
SOT-23F
S
Marking Diagram
J04 : Specific Device Code
J04 □
□ : year & week Code Marking
Absolute maximum ratings (TA=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
V
Gate-source voltage
VGSS
12
V
ID
-2.4
A
IDM
-9.6
A
PD
0.35
W
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
*
**
Avalanche current (Single)
②
IAS
-2.4
A
Single pulsed avalanche energy
②
EAS
13
mJ
Avalanche current (Repetitive)
①
IAR
-2.4
A
Repetitive avalanche energy
①
EAR
1.1
mJ
TJ
150
Tstg
-55~150
Junction temperature
Storage temperature range
C
* Limited by maximum junction temperature
**
Device mounted on a glass-epoxy board
Characteristic
Thermal
resistance
Junction-ambient
Symbol
Typ.
Max.
Unit
Rth(J-A)
-
357
C/W
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STJ004SF
Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ. Max. Unit
Drain-source breakdown voltage
BVDSS
ID=-250uA, VGS=0
-30
-
-
V
Gate threshold voltage
VGS(th)
ID=-250uA, VDS=VGS
-0.7
-
-1.4
V
Drain-source cut-off current
IDSS
VDS=-20V, VGS=0
-
-
1
uA
Gate leakage current
IGSS
VDS=0V, VGS=12V
-
-
100
nA
VGS=-4.5V, ID=-1.2A
-
61
91
VGS=-2.5V, ID=-1.2A
-
86
129
VDS=-5V, ID=-2.4A
-
13.2
-
-
398
-
-
82
-
Drain-source on-resistance
④
RDS(ON)
Forward transfer conductance
④
gfs
Input capacitance
Ciss
VGS=0V, VDS=-10V,
f=1MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
46
-
Turn-on delay time
td(on)
-
11
-
-
5.3
-
-
7.6
-
-
5.3
-
-
6.4
9.6
-
2.8
4.2
-
1.7
2.6
Rise time
VDD=-10V, ID=-2.4A
VGS=-5V, RG=25Ω
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
③④
VDD=-10V, VGS=-5V
ID=-2.4A
②④
m
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TA=25C unless otherwise noted)
Characteristic
Symbol
Continuous source current
IS
Test Condition
Min.
Typ. Max. Unit
-
-
-0.5
-
-
-2.0
Source current (Pulsed)
①
ISM
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=-0.5A
-
-0.7
-1.2
V
Reverse recovery time
trr
-
29
-
ns
Reverse recovery charge
Qrr
Is=-2.4A, VGS=0V
dIF/dt=10A/us
-
130
-
uC
A
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=2.0mH, IAS=-2.9A, VDD=-15V, RG=25Ω
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T5C045-002
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STJ004SF
P-CH Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
-
-
℃
-
-
m
-
Fig. 3 RDS(on) - ID
℃
-
a
Fig. 4 IS - VSD
-
-
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
-
℃
STJ004SF
`
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STJ004SF
Fig. 8 RDS(on) - TJ
-
Fig. 7 VDSS - TJ
C
C
Fig. 10 Safe Operating Area
-
Fig. 9 ID - Ta
*
t
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STJ004SF
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
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STJ004SF
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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STJ004SF
Outline Dimension
unit: mm
※ Recommended Land Pattern [unit: mm]
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STJ004SF
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
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