KODENSHI SMK0460P-1

SMK0460P
Semiconductor
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
PIN Connection
High Voltage: BVDSS=600V(Min.)
Low Crss : Crss=5.8pF(Typ.)
Low gate charge : Qg=13nC(Typ.)
Low RDS(on) :RDS(on)=2.5Ω(Max.)
D
G
Ordering Information
Type No.
Marking
Package Code
SMK0460P
SMK0460
TO-220AB-3L
GDS
S
TO-220AB-3L
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
(Tc=25℃)
4
A
(Tc=100℃)
2.53
A
Drain current (DC)
ID
*
IDM
16
A
Drain Power dissipation
PD
70
W
Drain current (Pulsed)
Avalanche current (Single)
②
IAS
4
A
Single pulsed avalanche energy
②
EAS
225
mJ
Avalanche current (Repetitive)
①
IAR
4
A
Repetitive avalanche energy
①
EAR
10
mJ
TJ
150
Tstg
-55~150
Junction temperature
Storage temperature range
°C
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Symbol
Typ.
Max
Junction-case
Rth(J-C)
-
1.78
Junction-ambient
Rth(J-a)
-
62.5
KSD-T0P021-000
Unit
℃/W
1
SMK0460P
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250μA, VGS=0
600
-
-
V
Gate-threshold voltage
VGS(th)
ID=250μA, VDS= VGS
2.0
-
4.0
V
Drain-source leakage current
IDSS
VDS=600V, VGS=0V
-
-
1
μA
Gate-source leakage
IGSS
VDS=0V, VGS=±30V
-
-
±100
nA
Drain-Source on-resistance
④
RDS(ON)
VGS=10V, ID=2.0A
-
2.1
2.5
Ω
Forward transfer admittance
④
gfs
VDS=10V, ID=2.0A
-
4.0
-
S
-
592
789
-
54
72
-
5.8
7.7
-
10
-
-
42
-
-
38
-
-
46
-
-
13
17
-
4
-
-
3
-
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VGS=0V, VDS=25V, f=1MHz
VDD=300V, ID=4A
RG=25Ω
③④
VDS=480V, VGS=10V
ID=4A
③④
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Continuous source current
IS
Test Condition
Min
Typ
Max
-
-
4
-
-
16
Unit
Source current (Pulsed)
①
ISM
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=4A
-
-
1.4
V
Reverse recovery time
trr
-
300
-
ns
Reverse recovery charge
Qrr
Is=4A
dis/dt=100A/us
-
2.2
-
uC
A
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=25.9mH, IAS=4A, VDD=50V, RG=27Ω , Starting TJ = 25℃
③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T0P021-000
2
SMK0460P
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
7.5
7.0
6.5
6.0
5.5
.0
: .5
℃
-
Fig. 4 IS - VSD
Fig. 3 RDS(on) - ID
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
KSD-T0P021-000
3
SMK0460P
Electrical Characteristic Curves
Fig. 8 RDS(on) - TJ
Fig. 7 VDSS - TJ
ㅋ
C
C
Fig. 9
ID - TC
Fig. 10 Safe Operating Area
`
*
KSD-T0P021-000
4
SMK0460P
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0P021-000
5
SMK0460P
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T0P021-000
6
SMK0460P
Outline Dimension
KSD-T0P021-000
7
SMK0460P
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0P021-000
8