SUF3001 Semiconductor Dual P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS(th) : VGS(th)=1.0~3.0V • Small footprint due to small package • Low RDS (ON) : RDS (ON) =66mΩ Ordering Information Type NO. Marking SUF3001 Package Code SUF3001 SOP-8 Outline Dimensions unit : mm 5.88~6.18 4.81~5.01 1.24~1.44 0.27 Max. 1.27 Typ. 3.81 Typ. 0.52 Max. 0.27 Max. 3.70~3.90 0.46 Min. Block Diagram KSD-T7F004-000 PIN Connections 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1 1 SUF3001 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS ±20 V ID -5.3 A IDP -21.2 A PD 2.0 W Drain current (DC) Drain current (Pulsed) * Total Power dissipation ** Avalanche current (Single) ② IAS -5.3 A Single pulsed avalanche energy ② EAS 33 mJ Avalanche current (Repetitive) ① IAR -5.3 A Repetitive avalanche energy ① EAR 1.6 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Typ. Max Unit Rth(J-a) 62.5 - ℃/W KSD-T7F004-000 2 SUF3001 Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 -30 - - V Gate threshold voltage VGS(th) ID=250μA, VDS=VGS -1.0 - -3.0 V Drain-source cut-off current IDSS VDS=-30V, VGS=0V - - 1 μA Gate leakage current IGSS VDS=0V, VGS=±20V - - ±100 nA VGS=-10V, ID=-2.7A - 66 72 mΩ VGS=-5.0V, ID=-2.7A - 77 83 mΩ - 11 - S - 390 590 - 97 150 - 37 60 - 1.2 - - 1.1 - - 2.5 - - 1.1 - - 4.7 7.0 - 1.4 2.1 - 1.7 2.5 Drain-source on-resistance RDS(ON) Forward transfer conductance VDS=-5V, ID=-5.3A gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge ④ VGS=0V, VDD=-10V, f=1MHz VDD=-15V, ID=-5.3A RG=10Ω ③④ VDD=-15V, VGS=-5V ID=-5.3A ③④ Qgd Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current IS Test Condition pF ns nC (Ta=25°C) Min Typ Max - - -1.5 - - -6.0 Unit Source current(Plused) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=-1.5A - - -1.2 V Is=-1.5A diS/dt=100A/us - 90 - ns - 0.5 - uC Reverse recovery time trr Reverse recovery charge Qrr A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2.0mH, IAS=-5.0A, VDD=-15V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T7F004-000 3 SUF3001 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS - - ℃ - - - m Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ - a - - Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T7F004-000 4 SUF3001 Fig. 8 RDS(on) - TJ - Fig. 7 VDSS - TJ C C Fig. 10 Safe Operating Area Fig. 9 ID - Ta * t KSD-T7F004-000 5 SUF3001 Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T7F004-000 6 SUF3001 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T7F004-000 7 SUF3001 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T7F004-000 8