LRC L2N5401

LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
ʳ PNP Silicon
L2N5401
ʳ
L2N5401
ʳ
12
MAXIMUM RATINGS
Rating
Symbol
2N5401
Unit
Collector − Emitter Voltage
VCEO
150
Vdc
Collector − Base Voltage
VCBO
160
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
625
5.0
mW
mW/°C
1.5
12
Watts
mW/°C
−55 to +150
°C
TO-92
3
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
2N5401
YWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Y
WW
= Year
= Work Week
L2N5401-1/4
LESHAN RADIO COMPANY, LTD.
L2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
−
160
−
5.0
−
−
−
50
50
−
50
50
60
50
−
240
−
−
−
0.2
0.5
−
−
1.0
1.0
100
300
−
6.0
40
200
−
8.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cobo
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
−
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
L2N5401-2/4
LESHAN RADIO COMPANY, LTD.
L2N5401
200
150
h FE, CURRENT GAIN
TJ = 125°C
100
25°C
70
50
−55 °C
VCE = − 1.0 V
VCE = − 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
20
10
30
50
100
10
20
50
IC, COLLECTOR CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
µ
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10−1
10−2
REVERSE
25°C
10−3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE−EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut−Off Region
L2N5401-3/4
LESHAN RADIO COMPANY, LTD.
L2N5401
1.0
0.9
θV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.7
VBE(sat) @ IC/IB = 10
0.6
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
50
2.5
1.5
1.0
0.5
qVC for VCE(sat)
0
−0.5
−1.0
−1.5
qVB for VBE(sat)
−2.0
−2.5
0.1
100
TJ = − 55°C to 135°C
2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
10.2 V
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 mF
3.0 k
RC
Vout
RB
5.1 k
Vin
100
C, CAPACITANCE (pF)
100
70
50
VCC
−30 V
100
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
1000
700
500
10
20
Figure 7. Capacitances
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
300
1000
700
500
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
100
Figure 5. Temperature Coefficients
VBB
+8.8 V
Vin
50
100
70
50
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0
2.0 3.0 5.0
10
20 30
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
30
20
300
IC/IB = 10
TJ = 25°C
30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
50
100
200
L2N5401-4/4