LRC LMBT5550LT3G

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
ƽ
We declare that the material of product
compliance with RoHS requirements.
LMBT5550LT1G
LMBT5551LT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1G
M1F
3000/Tape&Reel
LMBT5550LT3G
M1F
10000/Tape&Reel
LMBT5551LT1G
G1
3000/Tape&Reel
LMBT5551LT3G
G1
10000/Tape&Reel
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
VCEO
MMBT5550
MMBT5551
Collector-Base Voltage
Vdc
140
160
VCBO
Collector Current - Continuous
3
COLLECTOR
Vdc
160
180
MMBT5550
MMBT5551
Emitter-Base Voltage
SOT–23
Unit
1
BASE
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
-55 to +150
°C
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
PD
RqJA
PD
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1G LMBT5551LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
140
160
-
160
180
-
6.0
-
-
100
50
100
50
-
50
60
80
60
80
20
30
250
250
-
-
0.15
0.25
0.20
-
1.0
1.2
1.0
-
50
100
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
LMBT5550
LMBT5551
V(BR)CBO
LMBT5550
LMBT5551
Emitter-Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Vdc
Vdc
V(BR)EBO
Vdc
ICBO
LMBT5550
LMBT5551
LMBT5550
LMBT5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
nAdc
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Collector Emitter Cut-off
(VCB = 10 V)
(VCB = 75 V)
LMBT5550
LMBT5551
LMBT5550
LMBT5551
LMBT5550
LMBT5551
hFE
-
VCE(sat)
Both Types
LMBT5550
LMBT5551
Vdc
VBE(sat)
Both Types
LMBT5550
LMBT5551
Vdc
ICES
Both Types
nA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
h FE, DC CURRENT GAIN (NORMALIZED)
LMBT5550LT1G LMBT5551LT1G
500
300
V CE = 1.0 V
T J = +125°C
200
V CE = 5.0 V
+25°C
100
–55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
T J = 25°C
0.8
I C = 1.0 mA
10 mA
0.6
30 mA
100 mA
0.4
0.2
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
10 1
1.0
T J = 25°C
V CE = 30 V
0.8
10
–1
T J = 125°C
I C= I
10 –2
10 –3
V, VOLTAGE (VOLTS)
I C, COLLECTOR CURRENT (µA)
10 0
CES
75°C
REVERSE
FORWARD
25°C
10 –4
V BE(sat) @ I C /I B = 10
0.6
0.4
0.2
V CE(sat) @ I C /I B = 10
10
–5
0
–0.4 –0.3
–0.2
–0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
Rev.O 3/5
100
LESHAN RADIO COMPANY, LTD.
2.5
T J = –55°C to +135°C
2
1.5
1.0
10.2 V
V BB
θ VC for V CE(sat)
0.5
V in
100
0
–0.5
0.25 mF
10 ms
–1.0
1.0
2.0 3.0 5.0
10
V out
20 30
50
100
V in
t r , t f <10 ns
DUTY CYCLE = 1.0%
–2.0
0.5
RC
RB
5.1 k
–1.5
0.2 0.3
3.0 k
30 V
INPUT PULSE
θ VB for V BE(sat)
–2.5
0.1
V CC
–8.8 V
1N914
100
θ
V
, TEMPERATURE COEFFICIENT (mV/°C)
LMBT5550LT1G LMBT5551LT1G
Values Shown are for I C @ 10 mA
I C , COLLECTOR CURRENT (mA)
Figure 6. Switching Time Test Circuit
Figure 5. Temperature Coefficients
100
1000
70
50
I C /I B = 10
T J = 25°C
T J = 25°C
300
20
200
10
7.0
t, TIME (ns)
30
C ibo
5.0
C obo
3.0
t r @ V CC = 120 V
t r @ V CC = 30 V
100
2.0
50
t d @ V EB(off) = 1.0 V
30
V CC = 120 V
20
10
1.0
0.2
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
0.2 0.3 0.5
20
1.0
2.0 3.0
5.0
10
20 30
50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 7. Capacitances Figure
8. Turn–On Time
100
200
5000
I C /I B = 10
T J = 25°C
t f @ V CC = 120 V
3000
2000
t f @ V CC = 30 V
1000
t, TIME (ns)
C, CAPACITANCE (pF)
500
500
300
t s @ V CC = 120 V
200
100
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1G LMBT5551LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5