LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. (SC-79/SOD523) IO=200mA guaranteed despite the size. Low VF.(VF=0.40V Typ. At 200mA) 2 SOD523/SC-79 zConstruction silicon epitaxial planar 1 Cathode MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Symbol VR IO Peak forward surge current* Limits Unit 30 200 V mA IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg -40~+125 °C 2 Anode *60Hz for 1 DEVICE MARKING LRB521S-30T1=5M ELECTRICAL CHARACTERISTICS(TA = 25°C) Conditions Parameter Forward voltage Symbol VF Min. Typ Max. Unit - - 0.50 V IF=200mA Reverse current IR - - 30 µΑ VR=10V LRB521S-30T1 –1/3 LESHAN RADIO COMPANY, LTD. LRB521S-30T1 Electrical characteristic curves(Ta=25oC) 1 10m Ta=125oC REVERSE CURRENT : I R (A) 1m 1m 75oC 100 25 o C 5o C 75 o C 25 o C 10m Ta =1 2 FORWARD CURRENT : I F (A) 100m 100 25oC 10 1 25 oC 100n 10 10n 1 0 0.1 0.2 0.3 0.4 0.5 0 0.6 Fig. 2 Reverse characteristics Fig. 1 Forward characteristics 100 Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT(pF) Ta=25oC f=1MHz 50 20 10 5 80 60 40 20 2 1 0 20 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGE:VF(V) 100 10 2 4 6 8 10 12 0 0 14 50 75 100 125 AMBIENT TEMPERATURE : Ta(oC) REVERSE VOLTAGE : VR(V) Fig. 3 Capacitance between terminals characteristics 25 Fig. 4 Derating curve (mounting on glass epoxy PCBs) LRB521S-30T1 –2/3 LESHAN RADIO COMPANY, LTD. LRB521S-30T1 SC-79/SOD-523 A C HE V M A 0.5 0 D A 1mm scale E b p DIMENSIONS(mmaretheoriginaldimensions) UNIT A bp c D E HE V mm 0.7 0.5 0.35 0.25 0.2 0.1 1.3 1.1 0.9 0.7 1.7 1.5 0.15 Note 1.Themarkingbarindicatesthecathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC EIAJ SC-79 EUROPEAN PROJECTION ISSUEDATE 98-11-25 LRB521S-30T1 –3/3