Zowie Technology Corporation Schottky Barrier Diode Lead free product Halogen-free type zApplictions Low current rectification and high speed switching zFeatures Extremelysmall surface mounting type. (SC-79/SOD523) Extremely Fast Switching Speed Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA Low Reverse Current z Construction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. RB521S-30GH 2 Anode 1 Cathode 2 1 SOD523/SC-79 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping RB521S-30GH 5M 3000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40~+125 Unit V mA A °C °C *60Hz for 1cycle. ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Reverse current REV. 0 Symbol VF IR Min. - Typ - Max. 0.50 30 Unit V µΑ Conditions IF=200mA VR=10V Zowie Technology Corporation Zowie Technology Corporation RB521S-30GH Electrical characteristic curves(Ta=25oC) 100 0.01 0.001 0 100 200 300 400 500 600 10 1.0 0.1 0.01 0.001 0.0001 0.00001 0 5 FORWARD VOLTAGE:VF(mV) -25℃ 25℃ 75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 f=1MHz REVERSE CURRENT : I R (mA) FORWARD CURRENT : I F (A) 1 10 15 20 25 30 35 40 45 10 REVERSE VOLTAGE:VR(V) 125℃ 100℃ -25℃ 75℃ 25℃ 100℃ 125℃ 1 0 Ta=25oC f=1MHz 50 10 5 80 60 40 20 2 4 6 8 10 12 14 25 50 75 100 Ta=25℃ f=1MHz VR=0V n=10pcs 18 17 16 15 14 13 AVE:14.33pF 12 10 125 AMBIENT TEMPERATURE : Ta(oC) Ct DISPERSION MAP Fig. 4 Derating curve (mounting on glass epoxy PCBs) 20 Ifsm 15 8.3ms 10 5 AVE:5.60A PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1cyc 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 2 REVERSE VOLTAGE : VR(V) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 Ifsm t 5 0 1 10 100 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.2 0.5 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.4 0.15 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 11 0 0 Fig. 3 Capacitance between terminals characteristics TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 15 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 1 0 D=1/2 DC Sin(θ＝180) 0.1 0.05 time 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 300us 10 0.001 REV. 0 10 20 100 Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT(pF) 100 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Fig. 2 Reverse characteristics Fig. 1 Forward characteristics 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 1000 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.5 0 10 20 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 30 Zowie Technology Corporation