MT5066A-UR2 Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF Reverse Current VR=5V IR λp IF=20mA Peak Wavelength Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=20mA Tr Fall Time IFP=20mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 300 50 40 30 20 10 0 SPECTRAL OUTPUT 1 2 100 0 10 20 30 40 50 100 80 60 40 20 0 -90 60 FORWARD CURRENT(mA) FORWARD VOLTAGE(V) -60 -30 0 30 60 BEAM ANGLE(deg.) 100 80 140 20 0 610 660 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 710 50 40 30 20 10 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 3 120 FORWARD VOLTAGE(V) 40 RELATIVE POWER OUTPUT(%) 60 60 FORWARD VOLTAGE vs TEMPERATURE IF=10mA POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE FORWARD CURRENT(mA) UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP 5 Reverse Voltage VR 110 Power Dissipation PD Topr -20 TO 80 Operating Temp. Tstg -30 TO 100 Storage Temp. 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 2.2 100 RADIATION PATTERN 200 3 UNIT mW V μA nm nm deg. nS nS pF %/℃ mV/℃ 120 0 0 120 MAX 660 25 ±18 30 30 20 -0.5 -1.5 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) ① Cathode ② Anode Dimensions (Unit:mm) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors FEATURES TYP 7.0 1.8 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS 60 MIN 5.0 100 80 60 40 20 0 -30 0 30 60 AMBIENT TEMPERATURE(℃) 90 2.5 2 1.5 1 0.5 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 90