MTE2050-OH1S Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM CONDITIONS SYMBOL Power Output IF=50mA PO Forward Voltage IF=50mA VF Reverse Current VR=5V IR Peak Wavelength λp IF=50mA Spectral Line Half Width Δλ IF=50mA Half Intensity Beam Angle IF=50mA θ Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 80 60 40 20 0 SPECTRAL OUTPUT 120 OPTRANS 200 150 100 50 1 2 3 0 25 50 75 100 100 80 60 40 20 0 -90 125 20 0 780 880 WAVELENGTH(nm) 980 60 POWER OUTPUT vs TEMPERATURE IF=10mA FORWARD VOLTAGE vs TEMPERATURE IF=10mA 140 100 80 60 40 20 0 -30 30 THERMAL DERATING CURVE RELATIVE POWER OUTPUT(%) 40 0 FORWARD CURRENT(mA) 120 60 -30 BEAM ANGLE(deg.) 0 30 60 90 AMBIENT TEMPERATURE(℃) 120 100 80 60 40 20 0 -30 90 1.6 FORWARD VOLTAGE(V) 80 FORWARD CURRENT(mA) UNIT mA A V mW ℃ ℃ ℃ ℃ -60 FORWARD VOLTAGE(V) 100 RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM RATINGS SYMBOL Forward Current (DC) 100 IF Forward Current (Pulse)*1 1 IFP Reverse Voltage 5 VR Power Dissipation 180 PD Topr Operating Temp. -20 TO 80 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body RADIATION PATTERN 0 0 UNIT mW 1.8 V 10 μA nm nm deg. μS μS pF %/℃ mV/℃ 120 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 100 MAX 880 60 ±12 1.5 0.8 15 -0.5 -1.5 250 120 FORWARD CURRENT(mA) ･High-output Power ･Narrow Beam Angle ･High Reliability APPLICATIONS ･Optical Switches ･Bar-code Reader FEATURES TYP 11.0 1.45 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS ① Anode ② Cathode Dimensions (Unit:mm) MIN 0 30 60 AMBIENT TEMPERATURE(℃) 90 1.5 1.4 1.3 1.2 1.1 1 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN TEL.81(44)932-6491 / FAX.81(44)932-8281 E-male [email protected] 2000710/23 009-LSF880N1