LS880PT Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ) CONDITIONS ITEM SYMBOL IF=50mA Power Output PO IF=50mA Forward Voltage VF VR=5V Reverse Current IR p IF=50mA Peak Wavelength IF=50mA Spectral Line Half Width IF=50mA Half Intensity Beam Angle IFP=50mA Rise Time Tr IFP=50mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T IF=10mA Temp. Coefficient of VF V/T FEATURES APPLICATIONS High-output Power Narrow Beam Angle (Excellent) Compact ( 2mm) High Reliability in Demanding Environments Optical Switches Edge Sensing (Coin Dispenser) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) ITEM RATINGS SYMBOL Forward Current (DC) 75 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD -20 TO 85 Operating Temp. Topr -30 TO 100 Storage Temp. Tstg Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body OPTRANS MIN TYP 2.5 1.45 MAX 1.8 10 880 60 ±4 1.5 0.8 15 -0.5 -1.5 UNIT mW V A nm nm deg. S S pF %/ mV/ Cathode Anode Dimensions (Unit:mm) UNIT mA A V mW To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2005/6/27 LS880PT