MICROSEMI 2N2222AL

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
800
mAdc
Collector Current
TO-18 (TO-206AA)
Total Power Dissipation @ TA = +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
Operating & Storage Junction Temperature Range
2N2221A, 2N2222A
PT
0.5
0.65
0.50
W
Top, Tstg
-65 to +200
°C
Symbol
Max.
Unit
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
1.
2.
2N2222A, L
2N2222AUA
2N2222AUB, UBC
4 PIN
2N2221AUA, 2N2222AUA
RθJA
325
210
325
°C/W
Derate linearly 3.08 mW/°C above TA > +37.5°C
Derate linearly 4.76 mW/°C above TA > +63.5°C
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0042 Rev. 3 (100247)
Page 1 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)CEO
50
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 60Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
Vdc
ICBO
10
10
μAdc
ηAdc
IEBO
10
10
μAdc
ηAdc
ICES
50
ηAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
30
50
IC = 1.0mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
35
75
IC = 10mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
IC = 150mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40
100
IC = 500mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
20
30
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
T4-LDS-0042 Rev. 3 (100247)
hFE
40
100
VCE(sat)
VBE(sat)
150
325
0.6
120
300
0.3
1.0
Vdc
1.2
2.0
Vdc
Page 2 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
Symbol
Min.
Max.
Unit
hfe
30
50
|hfe|
2.5
Cobo
8.0
pF
Cibo
25
pF
Max.
Unit
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Turn-On Time
See figure 8 of MIL-PRF-19500/255
ton
35
ηs
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
toff
300
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0042 Rev. 3 (100247)
Page 3 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length
of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)
below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to
tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies
between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70 19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
1, 2, 9, 11, 12, 13
Note
6
7,8
7,8,13
7,8
7,8
7,8
5
3,4
3
10
6
FIGURE 1. Physical dimensions (similar to TO-18).
T4-LDS-0042 Rev. 3 (100247)
Page 4 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension CH controls the overall package thickness. When a
window lid is used, dimension CH must increase by a minimum of
.010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the
manufacturer's option, from that shown on the drawing.
5. Dimensions LW2 minimum and L3 minimum and the appropriate
castellation length define an unobstructed three-dimensional space
traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on the bottom two layers,
optional on the top ceramic layer.) Dimension LW2 maximum and
L3 maximum define the maximum width and depth of the
castellation at any point on its surface. Measurement of these
dimensions may be made prior to solder dipping.
6. The co-planarity deviation of all terminal contact points, as defined
by the device seating plane, shall not exceed .006 inch (0.15mm) for
solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
Symbol
BL
BL2
BW
BW2
CH
L3
LH
LL1
LL2
LS
LW
LW2
Pin no.
Transistor
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.215
.225
5.46
5.71
.225
5.71
.145
.155
3.68
3.93
.155
3.93
.061
.075
1.55
1.90
.003
.007
0.08
0.18
.029
.042
0.74
1.07
.032
.048
0.81
1.22
.072
.088
1.83
2.23
.045
.055
1.14
1.39
.022
.028
0.56
0.71
.006
.022
0.15
0.56
1
Collector
2
Emitter
3
Base
Note
3
5
5
4
N/C
FIGURE 2. Physical dimensions, surface mount (UA version).
T4-LDS-0042 Rev. 3 (100247)
Page 5 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
UB
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.128
3.25
.108
2.74
.022
.038
0.56
0.96
.017
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.036
.040
0.91
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
.203
.012
.305
.022
.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensions, surface mount (UB version)
T4-LDS-0042 Rev. 3 (100247)
Page 6 of 7
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
UBC
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.071
1.17
1.80
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.128
3.25
.108
2.74
.022
.038
0.56
0.96
.017
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.036
.040
0.91
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
.203
.012
.305
.022
.559
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid)
T4-LDS-0042 Rev. 3 (100247)
Page 7 of 7