TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector Current IC 30 mAdc Total Power Dissipation @ TA = +25°C PT 0.2 W TO-72 Top, Tstg -65 to +200 °C 2N4261 Operating & Storage Junction Temperature Range Note: Consult 19500/511 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 15 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Vdc Collector-Base Cutoff Current VCB = 15Vdc ICBO Emitter-Base Cutoff Current VEB = 4.5Vdc IEBO 10 μAdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc ICEX1 50 ηAdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 2.0Vdc ICEX2 5 ηAdc T4-LDS-0150 Rev. 1 (092064) 10 μAdc 3 PIN 2N4261UB Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. hFE 30 Max. Unit (4) Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 1Vdc IC = 10mAdc, VCE = 1Vdc 25 IC = 30mAdc, VCE = 1Vdc Collector-Emitter Saturation Voltage IC = 1mAdc, IB = 0.1mAdc IC = 10mAdc, IB = 1.0mAdc Base-Emitter Saturation Voltage (Non-Saturated) VCE = 1Vdc, IC = 1mAdc VCE = 1Vdc, IC = 10mAdc 150 20 VCE(sat) 0.15 0.35 Vdc VBE 0.6 0.80 1.0 Vdc Symbol Min. Max. Unit |hfe| 20 Cobo 2.5 pF Cibo 2.5 pF Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small–Signal Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time VCC = 17Vdc; IC = 10mAdc ton 2.5 ηs Turn-Off Time VCC = 17Vdc; IC = 10mAdc toff 3.5 ηs (4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0150 Rev. 1 (092064) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 .406 .533 .500 .750 12.70 19.05 .016 .019 .41 .48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 .71 1.22 .036 .046 .91 1.17 .007 .18 45° TP Notes 5 5 7, 8 7, 8 7, 8 5 NOTES: 1 Dimension are in inches. 2 Millimeters are given for general information only. 3 Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4 Dimension TL measured from maximum HD. 5 Body contour optional within zone defined by HD, CD, and Q. 6 Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7 Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8 All four leads. 9 Dimension r (radius) applies to both inside corners of tab. 10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 11 Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N4261 (TO-72). T4-LDS-0150 Rev. 1 (092064) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 Ltr. BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Note Ltr. LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .035 .040 0.89 1.02 .071 .079 1.80 2.01 .016 .024 0.41 0.61 .008 0.20 .012 0.31 .022 0.56 Note NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 4 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N4261UB, surface mount. T4-LDS-0150 Rev. 1 (092064) Page 4 of 4