MICROSS J211_TO-92

J211
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J211
FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) The J211 is a n-channel JFET General Purpose
amplifier with low noise and low leakage.
The TO-92 package is well suited for cost sensitive
applications and mass production.
(See Packaging Information).
Maximum Temperatures Storage Temperature ‐55°C to +150°C ƒ
High gain
Operating Junction Temperature ‐55°C to +135°C ƒ
Low Leakage
Maximum Power Dissipation ƒ
Low Noise
Continuous Power Dissipation 360mW J211 Applications:
Derating over temperature 3.27 mW/°C ƒ
General Purpose Amplifiers
MAXIMUM CURRENT
ƒ
UHV / VHF Amplifiers
Gate Current (Note 1) 10mA ƒ
Mixers
MAXIMUM VOLTAGES ƒ
Oscillators
Gate to Drain Voltage or Gate to Source Voltage ‐25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐2.5 ‐‐ ‐4.5 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 7 ‐‐ 20 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current (Note 3) ‐‐ ‐‐ ‐100 pA VDS = 0V, VGS = ‐15V IG Gate Operating Current (Note 3) ‐‐ ‐10 ‐‐ pA VDS = 10V, ID = 1mA rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω IG = 1mA, VDS = 0V J211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance 6000 ‐‐ 12000 µmho VDS = 15V, VGS = 0V , f = 1kHz gos Output Conductance ‐‐ ‐‐ 200 Ciss Input Capacitance ‐‐ 4 ‐‐ pF VDS = 15V, VGS = 0V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1 ‐‐ en Equivalent Noise Voltage ‐‐ 10 ‐‐ nV/√Hz VDS = 15V, VGS = 0V , f = 1kHz J211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS J211 Benefits:
Click To Buy
td(on) Turn On Time 2 tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 ns VDD = 10V VGS(H) = 0V See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which J211 serviceability may be impaired. Note 2 ‐ Pulse test duration = 2ms Note 3 – Approximately doubles for every 10
°C increase in TA Micross Components Europe
Available Packages:
TO-92 (Bottom View)
J211 in TO-92
J211 in bare die.
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx