PN5114 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix PN5114 FEATURES DIRECT REPLACEMENT FOR SILICONIX PN5114 LOW ON RESISTANCE rDS(on) ≤ 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The TO-92 provides a low cost option and ease of manufacturing. Maximum Temperatures Storage Temperature ‐55°C to +200°C PN5114 Benefits: Operating Junction Temperature ‐55°C to +200°C Low On Resistance Maximum Power Dissipation ID(off) ≤ 500 pA Continuous Power Dissipation 500mW Switches directly from TTL logic MAXIMUM CURRENT PN5114 Applications: Gate Current (Note 1) IG = ‐50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V PN5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 4 ‐‐ 10 VDS = ‐15V, ID = ‐1nA V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1mA, VDS = 0V ‐‐ ‐1.0 ‐1.3 VGS = 0V, ID = ‐15mA VDS(on) Drain to Source On Voltage ‐‐ ‐0.7 ‐‐ VGS = 0V, ID = ‐7mA ‐‐ ‐0.5 ‐‐ VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐30 ‐‐ ‐90 mA VDS = ‐18V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐5 ‐‐ VDS = ‐15V, ID = ‐1mA pA ‐‐ ‐10 ‐500 VDS = ‐15V, VGS = 12V ID(off) Drain Cutoff Current ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = ‐1mA, VGS = 0V PN5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 75 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 VDS = ‐15V, VGS = 0V, f = 1MHz pF ‐‐ 5 7 VDS = 0V, VGS = 12V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 6 ‐‐ VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz PN5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS (See Packaging Information). Click To Buy td(on) Turn On Time 6 tr Turn On Rise Time 10 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 ns VGS(L) = ‐11V VGS(H) = 0V See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which PN5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% PN5114 SWITCHING CIRCUIT PARAMETERS VDD VGG RL RG ID(on) ‐10V 20V 430Ω 100Ω ‐15mA Micross Components Europe Available Packages: TO-92 (Bottom View) SWITCHING TEST CIRCUIT PN5114 in TO-92 PN5114 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.