LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(on) ≤ 150Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +200°C LS5116 Benefits: Operating Junction Temperature ‐55°C to +200°C Low On Resistance Maximum Power Dissipation ID(off) ≤ 500 pA Continuous Power Dissipation 500mW Switches directly from TTL logic MAXIMUM CURRENT LS5116 Applications: Gate Current (Note 1) IG = ‐50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 1 ‐‐ 4 VDS = ‐15V, ID = ‐1nA V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1mA, VDS = 0V ‐‐ ‐1.0 ‐‐ VGS = 0V, ID = ‐15mA VDS(on) Drain to Source On Voltage ‐‐ ‐0.7 ‐‐ VGS = 0V, ID = ‐7mA ‐‐ ‐0.5 ‐0.6 VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐25 mA VDS = ‐15V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐5 ‐‐ VDS = ‐15V, ID = ‐1mA pA ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 12V ID(off) Drain Cutoff Current ‐‐ ‐10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐10 ‐500 VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = ‐1mA, VGS = 0V LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 VDS = ‐15V, VGS = 0V, f = 1MHz pF ‐‐ 5 ‐‐ VDS = 0V, VGS = 12V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 6 ‐‐ VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 7 VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS (See Packaging Information). Click To Buy td(on) Turn On Time 12 tr Turn On Rise Time 30 td(off) Turn Off Time 10 tf Turn Off Fall Time 50 ns VGS(L) = ‐5V VGS(H) = 0V See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% LS5116 SWITCHING CIRCUIT PARAMETERS VDD VGG RL RG ID(on) ‐6V 8V 2kΩ 390Ω ‐3mA Available Packages: TO-18 (Bottom View) SWITCHING TEST CIRCUIT LS5116 in TO-18 LS5116 in bare die. Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.