J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) J SERIES SST SERIES TO-92 BOTTOM VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 150°C D 1 S 2 D S G 3 1 2 3 G Maximum Power Dissipation Continuous Power Dissipation 350mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain or Source -25V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP J/SST108 J/SST109 J/SST110 MIN MIN MAX MIN -6 -0.5 BVGSS Gate to Source Breakdown Voltage -25 VGS(off) Gate to Source Cutoff Voltage -3 VGS(F) Gate to Source Forward Voltage -25 -10 -2 MAX UNIT -25 IDSS Drain to Source Saturation Current Gate Leakage Current -0.01 V Gate Operating Current -0.01 Drain Cutoff Current 0.02 rDS(on) Drain to Source On Resistance VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V 80 ID(off) CONDITIONS IG = -1µA, VDS = 0V -4 0.7 2 IGSS IG MAX 40 10 mA -3 -3 -3 3 3 3 8 12 18 VGS = -15V, VDS = 0V nA 108, 109, 110 110A 25 VDS = 15V, VGS = 0V VDG = 10V, ID = 10mA VDS = 5V, VGS = -10V Ω VGS = 0V, VDS ≤ 0.1V DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP gfs Forward Transconductance 17 gos Output Conductance 0.6 rds(on) Drain to Source On Resistance SST 60 J 60 SST 11 J 11 Equivalent Input Noise Voltage 3.5 Ciss Input Capacitance Crss Reverse Transfer Capacitance en Linear Integrated Systems J/SST108 J/SST109 J/SST110 MIN MIN MIN MAX MAX MAX UNIT mS 8 12 18 85 85 85 15 15 Ω pF 15 nV/√Hz CONDITIONS VDS = 5V, ID = 10mA f = 1kHz VGS = 0V, ID = 0A f = 1kHz VDS = 0V, VGS = 0V f = 1MHz VDS = 0V, VGS = -10V f = 1MHz VDS = 5V, ID = 10mA f = 1kHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 SWITCHING CHARACTERISTICS SYM. td(on) tr td(off) tf CHARACTERISTIC SWITCHING TEST CIRCUIT TYP UNIT CONDITIONS VDD 3 Turn On Time 1 4 Turn Off Time VDD = 1.5V VGS(H) = 0V ns RL VGS(H) 18 OUT VGS(L) SWITCHING CIRCUIT CHARACTERISTICS SYM. J/SST108 J/SST109 1kΩ J/SST110 VGS(L) -12V -7V -5V RL 150Ω 150Ω 150Ω ID(on) 10mA 10mA 10mA 51Ω SOT-23 TO-92 0.175 0.195 0.130 0.155 0.89 1.03 0.37 0.51 1 0.045 0.060 0.170 0.195 51Ω 1.78 2.05 LS XXX YYWW 2 0.014 0.020 0.016 0.022 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.500 0.610 0.013 0.100 1 2 0.095 0.105 2.80 3.04 3 0.55 DIMENSIONS IN MILLIMETERS 3 0.045 0.055 DIMENSIONS IN INCHES. NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261