100 100NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Symbol Values Units IF(AV) 100 A Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms IF(RMS) 220 A IFSM 2000 A 2 20 kA s 2 Maximum I t for fusing @ t = 10ms It 2 M1 & M2 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol Values TJ -65 65 to +125 +1 Rth(JC) 1.1 Units 0 C 0 C/W Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage 1 Symbol Values Units IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO 100 200 to 1600 1.55 100 2 5 to 100 400 300 2500 A V V A V mA mA V/µs V D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. 100 100NTD ALL DIMENSIONS IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com