10MB Naina Semiconductor emiconductor Ltd. Single Phase Bridge Rectifier Features • Glass passivated chip junction • Surge capability of 150 A • High efficiency • Electrically isolated metal case for maximum heat dissipation • Mounting: thru hole for # 6 screw Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Symbol Parameters Maximum operating junction temperature range Maximum storage temperature range Approximate weight TJ TStg WT Values Units - 55 to + 125 - 55 to + 150 0 C 0 C 30 GBPC g Voltage Ratings (TA = 250C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current Peak forward surge current (10ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 7.5 A TA = Maximum DC reverse 250C current at rated DC blocking voltage per TA = element 1250C 1 Symbol 10MB Units VRRM 50 100 200 400 600 800 1000 V VRMS VDC 35 50 70 100 140 200 280 400 420 600 560 800 700 1000 V V IF(AV) 10.0 A IFSM 150 A VF 1.1 V 5.0 IR µA 500 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. 10MB ALL DIMENSIONS ARE IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com