70D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Standard Recovery Diodes (Stud Version), 70A FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V VRRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool controls Welder DO-203AB(DO-5) PRODUCT SUMMARY IF(AV) 70A MAJOR RATINGS AND CHARACTERISTICS 70D(R) TEST CONDITIONS PARAMETER 16 70 70 A 140 110 ºC TC I F(AV) I F(RMS) 50 HZ I FSM 60 HZ 50 HZ 60 HZ I 2t Range V RRM TJ UNIT 02 TO 12 110 A 1200 1250 7200 6540 A A 2s 200 to 1200 1600 V -65 to 180 -65 to 150 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 75D( R ) VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR),MIMIMUM AVALANCHE VOLTAGE V(1) 02 200 300 300 04 400 500 500 06 600 720 725 08 800 960 950 10 1000 1200 1150 12 1200 1440 1350 16 1600 1900 1750 Page 1 of 6 VRRM,MAXIMUM AT TJ=175°C mA 15 9 4.5 70D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION Maximum average forward current at case temperature I F(AV) 70D(R) TEST CONDITIONS SYMBOL PARAMETER 16 70 70 A 140 110 ºC 180 ° conduction, half sine wave I F(RMS) Maximum RMS forward current 110 t = 10 ms Maximum peak, one-cycle forward, I FSM non-reptitive surge current t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 1200 100%V RRM reapplied 1000 t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100%V RRM reapplied Sinusoidal half wave, Maximum l²√t for fusing 2 I √t t = 0.1 to 10 ms, no voltage reapplied Maximum forward voltage drop V FM l pk = 220A, T J = 25˚C, t p = 400µs rectangular wave A 1050 initial T J = T J maximum I 2t t = 8.3 ms A 1250 Maximum l²t for fusing UNIT 02 TO 12 7200 6540 5070 A 2s 4610 A 2 √s 72000 1.46 1.35 V THERMAL AND MECHANICAL SPECIFCATIONS TEST CONDITIONS SYMBOL PARAMETER Maximum junction operating and storage temperature range T J, T stg Maximum thermal resistace, junction to case R thJC 70D(R) 02 TO 12 16 - 65 to180 - 65 to150 DC operation UNIT ºC 0.45 K/W Maximum thermal resistance R thCS case to heatsink 0.25 Mounting surface, smooth, flat and greased Not lubricated thread ,tighting on nut (1) 3.4(30) (1) Maximum allowable mounting torque Lubricated thread ,tighting on nut (+0% , -10%) Not lubricated thread ,tighting on hexagon (2) 4.2(37) Lubricated thread ,tighting on hexagon (2) 3.2(28) 2.3(20) N·m (lbf · in) g 15 oz. 0.53 DO-203AB (DO-5) Approximate weight Case style N·m (lbf · in) See dimensions - link at the end of datasheet Note (1) Recommended for pass-through holes. (2) Recommended for holed threaded heatsinks. RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.08 0.06 120˚ 90˚ 0.10 0.13 0.19 0.11 0.14 0.20 0.30 0.30 60˚ 30˚ TEST CONDUCTIONS UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Page 2 of 6 70D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Current Ratings Characteristics 70D(R) Series (200V to 1200V) RthJC (DC) = 0.45 K/W 170 160 Conduction Angle 150 140 90° 60° 120° 180° 30° 150 Maximum Allowable Case Temperature(˚C) 180 70D(R) Series (1600V) RthJC (DC) = 0.45 K/W 140 130 Conduction Angle 120 90° 110 60° 120° 180° 30° 100 130 0 10 40 30 20 60 50 80 70 0 10 Average Forward Current (A) 170 160 Conduction Period 150 140 90° 60° 120° 180° DC 120 0 20 60 40 80 100 150 Maximum Allowable Case Temperature(˚C) 70D(R) Series (200V to 1200V) RthJC (DC) = 0.45 K/W 30° 30 40 50 60 70 70D(R) Series (1600V) RthJC (DC) = 0.45 K/W 140 130 Conduction Period 120 110 90° 100 60° 120° 30° 180° DC 90 40 20 0 120 Average Forward Current (A) 60 80 100 Average Forward Current (A) Fig.5 Forward Power Loss Characteristics 90 K/ W K/ W R elta -D 60 2 /W .3 K =0 SA Rth K/W 0.5 /W K 0.7 70 1. 5 /W 1K 180° 120° 90° 60° 30° 80 RMS Limit 50 3K 40 4 K/ W 30 Conduction Angle 20 70D(R) Series (200V to 1200V) TJ = 180 C /W 5 K/W 10 0 0 10 20 30 80 Fig.4 Current Ratings Characteristics 180 130 20 Average Forward Current (A) Fig.3 Current Ratings Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature(˚C) Fig.1 Current Ratings Characteristics 40 50 60 70 Average Forward Current (A) Page 3 of 6 80 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 120 70D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 120 1.5 K/ W W K/ .3 =0 K/ W aR elt -D 80 0. 7 1K /W A hS 100 Rt DC 180° 120° 90° 60° 30° W K/ 0.5 Maximum Average Forward Power Loss (W) Fig.6 Forward Power Loss Characteristics 2K /W 60 RMS Limit 3 K/ W Conduction Period 40 5 K/W 70D(R) Series (200V to 1200V) TJ = 180 C 20 0 20 10 0 40 70 60 80 Average Forward Current (A) 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 70 180° elt 10 Average Forward Current (A) 30 40 50 60 aR 5 K/ 70D(R) Series (1600V) Tj = 150°C 20 -D Conduction Angle 10 W 3K /W 4K /W 20 0 K/ 2K /W 30 0 .3 1.5 K/ W RMS Limit 40 K/ W =0 50 0. 7 SA 60 1K /W R th 120° 90° 60° 30° W K/ 0.5 Maximum Average Forward Power Loss (W) Fig.7 Forward Power Loss Characteristics W Maximum Allowable Ambient Temperature (°C) 70 80 75 50 25 100 125 150 Maximum Allowable Ambient Temperature (°C) Average Forward Current (A) Fig.8 Forward Power Loss Characteristics DC A hS = K/ W 1K /W Conduction Period 40 70D(R) Series (1600V) TJ = 150°C 20 K/ W R RMS Limit a elt -D 60 W K/ 1.5 3 0. 80 0. 7 W K/ 100 Rt 180° 120° 90° 60° 30° 0.5 Maximum Average Forward Power Loss (W) 120 2K /W 3K /W 5 K/ W 0 0 20 40 60 80 100 Average Forward Current (A) Page 4 of 6 120 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 150 RoHS RoHS 70D(R)Series SEMICONDUCTOR Nell High Power Products Fig.10 Forward Voltage Drop Characterisics 1100 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge initial TJ = TJ Max @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig.10 Maximum Non-Repetitive Surge Current 800 700 600 500 70D(R) Series 400 100 Tj = 25°C 70D(R) Series 1 300 1 10 100 0 Number Of Equal Amplitude Half Cyde Current Pulses(N) 1000 900 Maximum Non Repetitive Surge Current Versus Pulse Train Duration initial TJ = TJ Max No Voltage Reapplied Rated VRRM Reapplied 800 700 600 500 400 70D(R) Series 300 200 0.01 1 0.1 1.5 1 2 2.5 10 Steady State Value RthJC = 0.45 K/W (DC Operation) 1 0.1 0.01 70D(R) Series 0.001 0.0001 0.001 Pulse Train Duration (s) 0.01 0.1 1 Square Wave Pulse Duration (s) Fig.13 Forward Voltage Drop Characteristics 1000 100 10 1 0 0.5 1 3 Fig.12 Thermal Impedance ZthJC Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) 1100 0.5 Instantaneous Forward Voltage (V) Fig.11 maximum Non-Repetitive Surge Current 1200 Tj = Tj Max 10 1.5 2 Page 5 of 6 2.5 3 3.5 4 10 70D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code 70 D R 12 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code × 100 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AB (DO-5) 1/4”-28 UNF-2A M = Stud base DO-230AB (DO-5) M6× 1 17.3(0.68) 19(0.75) Ø15(Ø0.6) 0.9/1.5 (0.03/0.06) 11(0.43) 9.4/10.2 (0.37/0.4) 25.4(1.0) 6.1/6.7 (0.24/0.26) (3.0(0.11)MIN Ø4.3(Ø01.7) 1/4” 28UNF-2A For metric devices: M6× 1.0 Page 6 of 6