MTP50W SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Triple-Phase Bridge Rectifier, 50A MTP5006W Thru MTP5016W 11.7 7 9.35 º º Ø8.5 Ø10.2 20 28.5 º Ø4.5 º º 7 28.5 Ø8.5 9.6 13.4 22 12.4 Ø2 27 FEATURES All dimensions in millimeters UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA High surge current capability Low thermal resistance Solder dip 260°C, 40s Compliant to RoHS Glass passivated chips TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. MECHANICAL DATA PRIMARY CHARACTERRISTICS Case: GBPC Epoxy meets UL 94 V-O flammability rating Terminals: Gold plated on wire leads,solderable per J-STD-002 and JESD22-B102. Polarity: As marked Mounting Torque: 20 inches-lbs.max. Weight: 21g (0.74 ozs) Page 1 of 3 IF(AV) 50A V RRM 600V to 1600V I FSM 500A IR 5 µA VF 1.2V T J max. 150ºC RoHS RoHS MTP50W SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP50..W PARAMETER SYMBOL UNIT 06 08 10 12 16 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 1600 V Maximum RMS voltage V RMS 420 560 700 840 1120 V Maximum DC blocking voltage V DC 600 800 1000 1200 1600 V Maximum average forward rectified output current (Fig.1) I F(AV) 50 A I FSM 500 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 1000 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL I F = 25A VF Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C Typical junction capacitance per diode 4V, 1MHz MTP50..W 06 08 10 12 UNIT 16 1.2 V 5 IR µA 1000 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP50..W PARAMETER SYMBOL 06 08 R θJC (1) Typical thermal resistance 10 1.0 12 UNIT 16 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw ORDERING INFORMATION TABLE Device code MTP 50 16 W 1 - Module type: 3 phase Bridge 2 - Current rating: IF(AV) 3 - Voltage code x 10: VRRM 4 - Package outline: W for “GBPC” package Page 2 of 3 MTP50W SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Typical Forward Characteristics AVERAGE FORWARD CURRENT - IF (A) 50 Mounted on a 220x220x50mm Al plate heatsink 40 30 20 10 Resistive or Inductive load 0 0 50 100 150 INSTANTANEOUS FORWARD CURRENT - IF (A) Fig.1 Forward Current Derating Curve 50 40 30 20 10 typ. 0.6 1.0 1.2 1.4 1.6 400 300 200 100 8.3ms Single Half Sine-Wave JEDEC Method 0 100 NUMBER OF CYCLES AT 60 HZ Fig.4 Transient thermal impedance TRANSIENT THERMAL IMPEDANCE - Rthjc ( ℃ / W) 500 PDAK FWD SURGE CURRENT - IFSM (A) 0.8 INSTANTANEOUS FORWARD VOLTAGE - V F (V) Fig.3 Max Non-Repetitive Peak Surge Current 10 Tj=25℃ Pulse Width=300μs 0 CASE TEMPERATURE - TC (℃) 1 max. 1.0 Zth(j-C) 0.5 0 0.001 0.01 0.1 1.0 10 SQUARE WAVE PULSE DURATION (S) Page 3 of 3 100