GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 15A GBPC1506 Thru GBPC1512 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA GBPC-W GBPC High surge current capability ~ Low thermal resistance Solder dip 260°C, 40s - ~ Compliant to RoHS + Glass passivated chips + - TYPICAL APPLICATIONS ~ ~ General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. GBPC1506W). Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 14g (0.49 ozs) + ~ ~ - GBPC GBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 1.135 (28.8) 1.115 (28.3) 0.24 (6.0) 0.18 (4.6) 0.042 (1.07) 0.038 (0.97) DIA. 0.24 (6.0) 0.18 (4.6) 0.732 (18.6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.50 (12.7) 0.44 (11.7) 1.25 (31.8) MIN. 0.672 (17.1) 0.632 (16.1) AC 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.034 (0.86) 0.030 (0.76) 0.310 (7.62) 0.290 (7.36) Page 1 of 4 1.135 (28.8) 1.115 (28.3) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) 0.094 (2.4) DIA. 0.310 (7.62) 0.290 (7.36) www.nellsemi.com Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 15A V RRM 600V to 1200V I FSM 300A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC15 PARAMETER UNIT SYMBOL 06 08 10 12 1000 1200 V V Maximum repetitive peak reverse voltage V RRM 600 800 Maximum RMS voltage V RMS 420 560 700 840 Maximum DC blocking voltage V DC 600 800 1000 1200 Maximum average forward rectified output current (Fig.1) I F(AV) 15 A I FSM 300 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 375 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC15 TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 7.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C PARAMETER voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz 06 08 10 12 1.1 V 5 IR UNIT µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC15 PARAMETER SYMBOL Typical thermal resistance R θJC (1) 06 08 10 1.4 UNIT 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Maximum output rectified current 40 40 35 35 Average forward current (A) Average forward current (A) Fig.1 Maximum output rectified current 30 25 20 Bridges Mounted on 5x4x3” 15 AL, Finned Plate 10 60 HZ Resistive or lnductive Load 5 25 75 50 100 125 150 175 25 20 GBPC15 15 RthSA = 0.5 °C/W 10 0 200 0 10 20 30 40 50 60 70 80 90 100 Case temperature (°C) Ambient temperature (°C) Fig.3 Maximum power dissipation Fig.4 Maximum non-repetitive peak forward surge current per diode 80 1000 70 Capacitive Load Peak forward surge current (A) Average power dissipation of bridge (W) 30 5 0 0 60 HZ Resistive or lnductive Load 60 50 T J = T J Max. 40 Resistive or Inductive Load 30 20 T J = T J Max. 0.5 ms Single Sine-Wave 100 10 1.0 Cycle 0 0 10 20 30 40 Average output current (A) www.nellsemi.com 10 1 10 Number of Cycles at 60 Hz Page 3 of 4 100 GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical Instantaneous forward Fig.6 Typical reveres leakage characteristics characteristics per diode per diode 1000 T A = 150°C Instantaneous reverse leakage current (µA) Instantaneous forward current (A) 100 T A = 150°C 10 T A = 125°C T A = 100°C 1 T A = 25°C T A = 125°C 100 T A = 100°C 10 1 T A = 25°C 0.1 0.1 0.4 0.5 0.6 0.8 0.7 0.9 1.0 0 1.1 Instantaneous forward voltage (V) 10 20 30 40 50 70 80 90 100 Percent of rated peak reverse voltage (%) Fig.7 Typical junction capacitance per diode Fig.8 Typical transient thermal lmpedance per diode 1,000 1,000 T J = 25°C Transient thermal lmpedance (°CW) T J = 25°C Junction capacitance (pF) 60 f = 1.0 MHZ V sig = 50mVp-p 100 10 1 10 100 Reverse v oltage (V) www.nellsemi.com f = 1.0 MHZ V sig = 50mVp-p 100 10 1 0.01 0.1 1 10 t, Heating time (sec.) Page 4 of 4 100